发明授权
- 专利标题: Method and apparatus for forming silicon oxide film
- 专利标题(中): 用于形成氧化硅膜的方法和装置
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申请号: US10879034申请日: 2004-06-30
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公开(公告)号: US07700156B2公开(公告)日: 2010-04-20
- 发明人: Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
- 申请人: Kimiya Aoki , Katsushi Suzuki , Asami Shirakawa , Kenji Tago , Keisuke Suzuki , Kazuo Saki , Shinji Mori
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Tokyo Electron Limited,Kabushiki Kaisha Toshiba
- 当前专利权人: Tokyo Electron Limited,Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2003-192063 20030704; JP2004-178669 20040616
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23C14/10 ; C23C16/40
摘要:
In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
公开/授权文献
- US20050056220A1 Method and apparatus for forming silicon oxide film 公开/授权日:2005-03-17