摘要:
A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.
摘要:
In a method of forming a silicon oxide film, a target substrate that has a silicon layer on a surface is loaded into a process area within a reaction container, while setting the process area to have a loading temperature of 400° C. or less. Then, the process area that accommodates the target substrate is heated, from the loading temperature to a process temperature of 650° C. or more. Water vapor is supplied into the reaction container during said heating the process area, while setting the water vapor to have a first concentration in an atmosphere of the process area, and setting the process area to have a first reduced pressure. After said heating the process area to the process temperature, an oxidation gas is supplied into the reaction container, thereby oxidizing the silicon layer to form a silicon oxide film.
摘要:
A plasma treatment apparatus includes a susceptor, a silica cover covering a plasma generating area above the susceptor, a chamber housing the susceptor and the silica cover, a gas inlet introducing conditioning gas into the chamber, a plasma generator generating a plasma of the conditioning gas configured to perform conditioning of the silica cover, an analyzing unit configured to monitor changes in a nitride layer on the surface of the silica cover, and a control unit connected to the analyzing unit configured to determine completion of the conditioning based on the change in the nitride layer.
摘要:
A semiconductor manufacturing apparatus which continuously executes oxidation and CVD in a multiprocess apparatus includes an internal apparatus controller which selects the type of process and supplies a start signal and stop signal for the process to the multiprocess apparatus, and a process controller which calculates the process state for each process on the basis of the internal information of the apparatus. Upon receiving the stop signal from the controller, the controller sends the stop signal to the multiprocess apparatus to stop the current process by the multiprocess apparatus and switches to the next process.
摘要:
An element isolation method of a semiconductor device comprises the steps of forming an oxide film on a semiconductor substrate; forming a nitride film on the oxide film; forming an isolation trench on the semiconductor device, the isolation trench being formed through the nitride film and oxide film; forming an oxide insulation layer on the semiconductor substrate to fill the isolation trench and cover the nitride film; flattening the surface of the semiconductor substrate to expose the nitride film by removing a surface portion of the oxide insulation layer in the isolation trench and the oxide insulation layer on the nitride film; heating the flattened semiconductor substrate in a nitrogen-containing gas atmosphere under reduced pressure to form an oxy-nitride film at an interface between an inside wall of the isolation trench and the oxide insulation layer in the isolation trench; and removing the nitride film and the oxide film on the semiconductor substrate.
摘要:
An isolation structure is provided by a method which includes forming a pad oxide layer on a semiconductor substrate and then forming a pad nitride layer on the pad oxide layer. An opening is then formed which extends through the pad nitride layer, the pad oxide layer, and into the semiconductor substrate. The pad nitride layer is then isotropically etched, thereby pulling-back the pad nitride layer from the portion of the opening extending through the pad oxide layer. An insulating layer is formed to fill in the opening including the portion of the opening formed by the pulling-back of the pad nitride layer. The deposited insulating layer is then planarized using the pulled-back nitride layer as a stopper layer. The pulled-back pad nitride layer and the pad oxide layer are then removed.
摘要:
In a process of annealing an insulating film such as a silicon oxide film (SiO2) or a silicon oxynitride film (SiON) provided in a processing chamber 6 within an atmosphere of an inert gas 2 guided from a first mass flow controller 3 via a gas inlet 7, an amount of SiO sublimated from the surface of the insulating film in the processing chamber 6 is measured by a mass spectrometer 10, and an amount of oxygen gas 4 guided to the processing chamber 6 from a second mass flow controller 5 is controlled by a controller 1 so that the SiO concentration does not exceed a predetermined level, thereby effectively controlling the SiO sublimation. As a result, the film deterioration caused by the SiO sublimation is prevented and an insulating film having a high reliability and good characteristics can be formed in a controllable manner.
摘要:
A system for controlling lot processes, which are executed in parallel, includes: first and second processing tools processing wafers classified into the lots; a transfer tool transferring the wafers from the first to second processing tools; a recipe storage unit storing recipe data including first and second process periods; a determination module determining first abd second starting times so as to minimize a waiting interval between the first and second process periods, based on the recipe data; and a control module controlling the first and second processing tools by starting operations at the first and second starting times, respectively.
摘要:
A semiconductor manufacturing apparatus includes a processing apparatus main body which executes a process related to manufacturing a semiconductor device, an internal apparatus controller which supplies a start signal to start a process and a stop signal to stop the process of the semiconductor device within the processing apparatus main body, and a process controller which calculates a physical characteristic of the semiconductor device currently being processed and sends the stop signal to the apparatus controller when a calculated value reaches a predetermined value.
摘要:
A method of manufacturing a semiconductor device according to an embodiment of the present invention comprises forming a semiconductor element on a semiconductor substrate, forming a silicon oxide film containing nitrogen on the semiconductor element and injecting heavy hydrogen into the silicon oxide film containing nitrogen.