Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture

发明授权

US07700436B2 Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture 有权

标题翻译：用于去除微电子衬底的相邻导电材料和非导电材料的方法和装置

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专利标题： Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture
专利标题（中）： 用于去除微电子衬底的相邻导电材料和非导电材料的方法和装置
申请号： US11413256

申请日： 2006-04-28
公开(公告)号： US07700436B2

公开(公告)日： 2010-04-20
发明人: Whonchee Lee , Scott G. Meikle , Guy T. Blalock
申请人： Whonchee Lee , Scott G. Meikle , Guy T. Blalock
申请人地址： US ID Boise
专利权人： Micron Technology, Inc.
当前专利权人： Micron Technology, Inc.
当前专利权人地址： US ID Boise
代理机构： Perkins Coie LLP
主分类号： H01L21/8242
IPC分类号： H01L21/8242 ; H01L29/00

Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture

摘要：

A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.

摘要（中）：

一种用于从微电子衬底去除相邻的导电和非导电材料的微电子衬底和方法。在一个实施例中，微电子衬底包括具有设置在孔中的导电材料（例如铂）的孔的衬底材料（例如硼磷硅酸盐玻璃）和邻近导电的孔中的填充材料（例如磷硅玻璃）材料。填充材料可以具有约0.04GPa或更高的硬度，并且例如在从孔中去除填充材料之后，诸如电极的微电子结构可以设置在孔中。孔的外部的导电和填充材料的部分可以通过化学机械抛光填充材料，将填充材料从导电材料向内凹陷，以及电化学机械抛光导电材料来去除。硬填充材料可以抵抗导电颗粒的渗透，并且凹陷填充材料可以提供更全面地去除孔的外部的导电材料。

公开/授权文献

US20060199351A1 Method and apparatus for removing adjacent conductive and non-conductive materials of a microelectronic substrate 公开/授权日：2006-09-07

信息查询

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）