公开(公告)号：US08048756B2

公开(公告)日：2011-11-01

申请号：US12731049

申请日：2010-03-24

申请人： Whonchee Lee ,  Scott G. Meikle ,  Guy T. Blalock

发明人： Whonchee Lee ,  Scott G. Meikle ,  Guy T. Blalock

IPC分类号： H01L21/8242

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/32125 ,  H01L28/65 ,  H01L28/91

摘要： A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.

摘要翻译： 一种用于从微电子衬底去除相邻的导电和非导电材料的微电子衬底和方法。 在一个实施例中，微电子衬底包括具有设置在孔中的导电材料（例如铂）的孔的衬底材料（例如硼磷硅酸盐玻璃）和邻近导电的孔中的填充材料（例如磷硅玻璃） 材料。 填充材料可以具有约0.04GPa或更高的硬度，并且例如在从孔中去除填充材料之后，诸如电极的微电子结构可以设置在孔中。 孔的外部的导电和填充材料的部分可以通过化学机械抛光填充材料，将填充材料从导电材料向内凹陷，以及电化学机械抛光导电材料来去除。 硬填充材料可以抵抗导电颗粒的渗透，并且凹陷填充材料可以提供更全面地去除孔的外部的导电材料。

公开(公告)号：US07700436B2

公开(公告)日：2010-04-20

申请号：US11413256

申请日：2006-04-28

申请人： Whonchee Lee ,  Scott G. Meikle ,  Guy T. Blalock

发明人： Whonchee Lee ,  Scott G. Meikle ,  Guy T. Blalock

IPC分类号： H01L21/8242 ,  H01L29/00

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/32125 ,  H01L28/65 ,  H01L28/91

摘要： A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.

摘要翻译： 一种用于从微电子衬底去除相邻的导电和非导电材料的微电子衬底和方法。 在一个实施例中，微电子衬底包括具有设置在孔中的导电材料（例如铂）的孔的衬底材料（例如硼磷硅酸盐玻璃）和邻近导电的孔中的填充材料（例如磷硅玻璃） 材料。 填充材料可以具有约0.04GPa或更高的硬度，并且例如在从孔中去除填充材料之后，诸如电极的微电子结构可以设置在孔中。 孔的外部的导电和填充材料的部分可以通过化学机械抛光填充材料，将填充材料从导电材料向内凹陷，以及电化学机械抛光导电材料来去除。 硬填充材料可以抵抗导电颗粒的渗透，并且凹陷填充材料可以提供更全面地去除孔的外部的导电材料。

公开(公告)号：US06331488B1

公开(公告)日：2001-12-18

申请号：US08862752

申请日：1997-05-23

申请人： Trung T. Doan ,  Guy T. Blalock ,  Mark Durcan ,  Scott G. Meikle

发明人： Trung T. Doan ,  Guy T. Blalock ,  Mark Durcan ,  Scott G. Meikle

IPC分类号： H01L21302

CPC分类号： H01L21/31053

摘要： A method of manufacturing semiconductor devices using an improved chemical mechanical planarization process for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through a chemical mechanical planarization process.

摘要翻译： 使用改进的化学机械平面化工艺制造半导体器件的方法，用于对其上形成半导体器件的晶片的表面进行平坦化。 改进的化学机械平面化处理包括从晶片表面上的可变形涂层形成平坦的平坦表面，其填充在通过化学机械平面化工艺在表面平坦化之前的表面凹凸之间。

公开(公告)号：US06743724B2

公开(公告)日：2004-06-01

申请号：US09832560

申请日：2001-04-11

申请人： Trung T. Doan ,  Guy T. Blalock ,  Mark Durcan ,  Scott G. Meikle

发明人： Trung T. Doan ,  Guy T. Blalock ,  Mark Durcan ,  Scott G. Meikle

IPC分类号： H01L21302

CPC分类号： H01L21/31053

摘要： A method of manufacturing semiconductor devices using an improved chemical mechanical planarization process for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved chemical mechanical planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer filling in between the surface irregularities prior to the planarization of the surface through a chemical mechanical planarization process.

摘要翻译： 使用改进的化学机械平面化工艺制造半导体器件的方法，用于对其上形成半导体器件的晶片的表面进行平坦化。 改进的化学机械平面化处理包括从晶片表面上的可变形涂层形成平坦的平坦表面，其填充在通过化学机械平面化工艺在表面平坦化之前的表面凹凸之间。

公开(公告)号：US08048287B2

公开(公告)日：2011-11-01

申请号：US12580941

申请日：2009-10-16

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25F3/16

CPC分类号： B24B37/12 ,  B23H3/00 ,  B23H3/02 ,  B23H5/08 ,  B24B37/046 ,  B24B37/30 ,  C25F3/14 ,  C25F7/00

摘要： Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

摘要翻译： 用于从微电子衬底选择性去除导电材料的方法和装置。 根据本发明的实施例的方法包括将微电子基板定位在靠近并与电极对间隔开的位置，电极对包括第一电极和与第一电极间隔开的第二电极。 电解液可以通过第一流动通道引导到微电子衬底和电极对之间的界面区域。 可以将变化的电信号通过电极对和电解液体以从微电子衬底去除导电材料。 可以通过靠近第一流动通道和电极对的第二流动通道去除电解液体。

公开(公告)号：US07220166B2

公开(公告)日：2007-05-22

申请号：US10230970

申请日：2002-08-29

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： B24B1/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US07972485B2

公开(公告)日：2011-07-05

申请号：US12561824

申请日：2009-09-17

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25F7/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US20100006428A1

公开(公告)日：2010-01-14

申请号：US12561824

申请日：2009-09-17

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： C25B9/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US07618528B2

公开(公告)日：2009-11-17

申请号：US11616683

申请日：2006-12-27

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： B23H5/06 ,  C25D17/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US07134934B2

公开(公告)日：2006-11-14

申请号：US10230972

申请日：2002-08-29

申请人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

发明人： Whonchee Lee ,  Scott E. Moore ,  Scott G. Meikle

IPC分类号： B24B49/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  C25F3/14

摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.