发明授权
- 专利标题： Method for producing semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11893458申请日： 2007-08-16
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公开(公告)号： US07709353B2公开(公告)日： 2010-05-04
- 发明人: Hideki Ono , Satoshi Taniguchi
- 申请人： Hideki Ono , Satoshi Taniguchi
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Rockey, Depke & Lyons, LLC.
- 代理商 Robert J. Depke
- 优先权： JPP2006-224845 20060822
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.
公开/授权文献
- US20080050858A1 Method for producing semiconductor device 公开/授权日：2008-02-28