公开(公告)号：US20090253249A1

公开(公告)日：2009-10-08

申请号：US12379827

申请日：2009-03-03

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/20

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

摘要翻译： 提供一种制造半导体器件的方法，在其中形成有牺牲层的基于InP的器件的情况下，能够获得比使用AlAs单层作为 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。

公开(公告)号：US07244973B2

公开(公告)日：2007-07-17

申请号：US11038255

申请日：2005-01-21

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

公开(公告)号：US08288247B2

公开(公告)日：2012-10-16

申请号：US13402383

申请日：2012-02-22

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/46

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

摘要翻译： 提供一种制造半导体器件的方法，其中在其间形成有牺牲层的基于InP的器件的情况下，与使用AlAs单层的情况相比，能够获得更好的器件特性 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。

公开(公告)号：US20120149179A1

公开(公告)日：2012-06-14

申请号：US13402383

申请日：2012-02-22

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/20

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

摘要翻译： 提供一种制造半导体器件的方法，其中在其间形成有牺牲层的基于InP的器件的情况下，与使用AlAs单层的情况相比，能够获得更好的器件特性 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。

公开(公告)号：US20080050858A1

公开(公告)日：2008-02-28

申请号：US11893458

申请日：2007-08-16

申请人： Hideki Ono ,  Satoshi Taniguchi

发明人： Hideki Ono ,  Satoshi Taniguchi

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L23/66 ,  H01L24/19 ,  H01L24/25 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/30105 ,  H01L2924/3511 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

摘要： A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上生长的器件层中形成预定的器件，其中设置有牺牲层; 以及通过蚀刻去除所述牺牲层，同时将所述半导体衬底与所述器件层分离，同时将支撑衬底接合到所述器件层的侧面，其中在去除所述牺牲层的步骤中，从所述器件层延伸到牺牲层 在除去牺牲层之前形成层，并且允许蚀刻溶液通过沟槽穿透到牺牲层。

公开(公告)号：US06870203B2

公开(公告)日：2005-03-22

申请号：US10287682

申请日：2002-11-05

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8234 ,  H01L29/20 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0328 ,  H01L31/072

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1-x-yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

摘要翻译： 一种形成场效应半导体器件的方法包括以下步骤：在由式Al x In y Ga 1-x-y N表示的由氮化镓系化合物半导体构成的半导体层上形成栅电极，其中x + y = = x <= 1，0 <= y <= 1; 并且使用栅电极作为掩模，通过自对准形成源电极和漏电极。 还公开了通过该方法制造的场效应半导体器件。

公开(公告)号：US08148238B2

公开(公告)日：2012-04-03

申请号：US12379827

申请日：2009-03-03

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/30

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

公开(公告)号：US20050127398A1

公开(公告)日：2005-06-16

申请号：US11038255

申请日：2005-01-21

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8234 ,  H01L29/20 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0328 ,  H01L31/072

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

摘要翻译： 一种场效应半导体器件的制造方法包括以下步骤：在由式Al x Y y表示的基于氮化镓的化合物半导体构成的半导体层上形成栅电极， 其中x + y = 1,0 <= x <= 1，0 <= y <= 1; 并且使用栅电极作为掩模，通过自对准形成源电极和漏电极。 还公开了通过该方法制造的场效应半导体器件。

公开(公告)号：US07709353B2

公开(公告)日：2010-05-04

申请号：US11893458

申请日：2007-08-16

申请人： Hideki Ono ,  Satoshi Taniguchi

发明人： Hideki Ono ,  Satoshi Taniguchi

IPC分类号： H01L21/46

CPC分类号： H01L21/78 ,  H01L21/6835 ,  H01L23/66 ,  H01L24/19 ,  H01L24/25 ,  H01L24/73 ,  H01L24/82 ,  H01L24/91 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/30105 ,  H01L2924/3511 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

摘要： A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上生长的器件层中形成预定的器件，其中设置有牺牲层; 以及通过蚀刻去除所述牺牲层，同时将所述半导体衬底与所述器件层分离，同时将支撑衬底接合到所述器件层的侧面，其中在去除所述牺牲层的步骤中，从所述器件层延伸到牺牲层 在除去牺牲层之前形成层，并且允许蚀刻溶液通过沟槽穿透到牺牲层。

公开(公告)号：US07160766B2

公开(公告)日：2007-01-09

申请号：US10772375

申请日：2004-02-06

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

摘要翻译： 一种场效应半导体器件的制造方法包括以下步骤：在由式Al x Y y表示的基于氮化镓的化合物半导体构成的半导体层上形成栅电极， 其中x + y = 1,0 <= x <= 1，0 <= y <= 1; 并且使用栅电极作为掩模，通过自对准形成源电极和漏电极。 还公开了通过该方法制造的场效应半导体器件。