摘要:
A data modulating device includes: an LDPC encoding unit configured to execute LDPC encoding; and a balance encoding unit configured to input a data string subjected to encoding by the LDPC encoding unit as data to be encoded, and convert k bits of this data to be encoded into balance code made up of m-bit block data; with the balance encoding unit executing balance encoding of said data to be encoded using a data conversion table subjected to mapping so that a set of the k-bit data patterns of which the Hamming distance is 1 corresponds to a set of block data of which the Hamming distance is 2.
摘要:
A data transfer circuit includes at least one transfer line transferring digital data, at least one data detecting circuit connecting to the transfer line, multiple holding circuits holding a digital value corresponding to the input level and transferring the digital value to the transfer line, and a scanning circuit selecting the multiple holding circuits, wherein the multiple holding circuits are laid out in parallel, and the transfer line is placed in the direction orthogonal to the direction of the parallel layout of the holding circuit and connects to the data detecting circuit placed in the orthogonal direction.
摘要:
Disclosed herein is a semiconductor storage device operable in a plurality of operation modes each having a separate maximum current consumption. The device includes: a data communication section configured to be capable of performing data communication in a plurality of communication modes; an attribute information storage section configured to store attribute information indicating the operation and communication modes; and a mode setting section configured to set the device to one of the operation modes and one of the communication modes. The data communication section transmits, to an electronic apparatus to which the device is attached, the information and receives from the apparatus a mode setting command for directing that the device be set to a combination of an operation mode and a communication mode selected from among the information. In accordance therewith, the mode setting section sets the device to the selected combination of modes.
摘要:
A DA conversion device includes the following elements. A higher-bit current source cell portion includes uniformly weighted higher-bit current source cells to generate an identical constant current. A lower-bit current source cell portion includes a lower-bit current source cells that are weighted to generate 1/two-to-the-power-of-certain-numbers constant currents. A constant current source selection controller includes a lower-bit controller having a scaler that uses clocks scaled down to 1/two-to-the-power-of-certain-numbers to select the lower-bit current source cells, and a higher-bit controller having shift registers and using a signal indicating a carry bit or a borrow bit used in the lower-bit controller to sequentially activate shift outputs of the shift registers, and uses the shift outputs to select the higher-bit current source cells. Constant current outputs of the selected current source cells are added and output so that an output current corresponding to the digital input signal is obtained.
摘要:
Disclosed herein is a touch panel display apparatus including: a display panel; a movable panel unit including a touch panel and being flat plate-like in shape; a movable support section for supporting the movable panel unit on a support structure so as to permit the movable panel unit to be moved along a plane parallel to the panel surface of the movable panel unit; an actuator configured to drive the movable panel unit to vibrate; an actuator drive control section for outputting an actuator drive signal to drivingly control the actuator; an acoustic pressure generating member configured to generate an acoustic pressure by being driven by the actuator to vibrate; and a superposing section for superposing an acoustic signal on the actuator drive signal outputted by the actuator drive control section.
摘要:
A solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area ratio higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.
摘要:
A semiconductor light emitting device downsized by devising arrangement of connection pads is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has a stripe-shaped semiconductor layer formed on a second substrate on the side facing to a first substrate, a stripe-shaped p-side electrode supplying a current to the semiconductor layer, stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, and a connection pad electrically connected to the p-side electrode. The connection pads are arranged in parallel with the opposed electrodes.
摘要:
A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.
摘要:
An immobilization carrier containing an electron acceptor compound is used in addition to glutaraldehyde and poly-L-lysine to immobilize an enzyme and an electron acceptor compound simultaneously to an electrode. For example, here are used diaphorase as the enzyme and 2-amino-3-carboxy-1, 4-naphthoquinone (ACNQ) as the electron acceptor compound.
摘要:
A composite optical element is provided. The composite optical element includes a plurality of optical elements, in which at least one of the optical elements is formed of an element modifying an optical path and the other optical elements are bonded to an incident surface and/or exit surface of the element modifying the optical path with a low refractive index material layer in between.