发明授权
- 专利标题： Semiconductor device with a line and method of fabrication thereof
- 专利标题（中）： 具有线的半导体器件及其制造方法
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申请号： US11676962申请日： 2007-02-20
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公开(公告)号： US07709388B2公开(公告)日： 2010-05-04
- 发明人: Kazuyoshi Maekawa , Kenichi Mori
- 申请人： Kazuyoshi Maekawa , Kenichi Mori
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-172500 20040610; JP2005-165252 20050606
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a lower hole and the liner film and the interlayer insulation film have an upper hole communicating with the lower hole, and the lower hole is larger in diameter than the upper hole. The semiconductor device further includes a conductive film provided at an internal wall surface of the lower hole, a barrier metal provided along an internal wall surface of the upper hole, and a Cu film filling the upper and lower holes. The conductive film contains a substance identical to a substance of the barrier metal. A highly reliable semiconductor device can thus be obtained.
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