发明授权
- 专利标题： Semiconductor device having insulating stripe patterns
- 专利标题（中）： 半导体器件具有绝缘条纹图案
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申请号： US10357381申请日： 2003-02-04
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公开(公告)号： US07709895B2公开(公告)日： 2010-05-04
- 发明人: Shunpei Yamazaki , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa
- 申请人： Shunpei Yamazaki , Atsuo Isobe , Hidekazu Miyairi , Hideomi Suzawa
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2002-033262 20020208
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
An uneven portion is formed on a substrate extending in a linear shape stripe pattern, convex portions of an insulating film that intersects with a crystalline semiconductor film divided into island shapes are removed, and an amorphous semiconductor film is formed on the insulating film. The semiconductor film is melted and flows into concave portions of the insulating film, where it crystallizes, and the semiconductor film that remains on the convex portions of the insulating film is removed. A semiconductor film divided into island shapes is then formed from the semiconductor film formed in the concave portions, the convex portions of the insulating film are removed in portions where channel forming regions are to be formed, thus exposing side surface portions of the semiconductor film. A gate insulating film and a gate electrode contacting the side surface portions and upper surface portions of the semiconductor film are then formed.
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