公开(公告)号：US07705357B2

公开(公告)日：2010-04-27

申请号：US10377725

申请日：2003-03-04

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L21/02609 ,  H01L21/02488 ,  H01L21/0262 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern.

摘要翻译： 提供了具有高电流驱动能力的半导体元件，能够高速操作，并且在多个半导体元件中几乎没有变化。 其特征在于，半导体元件具有包括多个晶体取向的第一晶体半导体区域，并且第一晶体半导体区域连接到导电的第二晶体半导体区域，其中第一晶体半导体区域沿着方向 平行于在绝缘表面上以线状条纹图案延伸的绝缘膜，并且第二晶体半导体区域设置在绝缘膜上方延伸的线状条纹图案。

公开(公告)号：US07166863B2

公开(公告)日：2007-01-23

申请号：US10941823

申请日：2004-09-16

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.

摘要翻译： 提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。 半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域 区域，其中导电区域被设​​置成跨过线性条纹图案延伸的绝缘膜。

公开(公告)号：US20050029519A1

公开(公告)日：2005-02-10

申请号：US10941823

申请日：2004-09-16

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.

摘要翻译： 提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。 半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域 区域，其中导电区域被设​​置成跨过线性条纹图案延伸的绝缘膜。

公开(公告)号：US07709895B2

公开(公告)日：2010-05-04

申请号：US10357381

申请日：2003-02-04

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa

IPC分类号： H01L27/12

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281

摘要： An uneven portion is formed on a substrate extending in a linear shape stripe pattern, convex portions of an insulating film that intersects with a crystalline semiconductor film divided into island shapes are removed, and an amorphous semiconductor film is formed on the insulating film. The semiconductor film is melted and flows into concave portions of the insulating film, where it crystallizes, and the semiconductor film that remains on the convex portions of the insulating film is removed. A semiconductor film divided into island shapes is then formed from the semiconductor film formed in the concave portions, the convex portions of the insulating film are removed in portions where channel forming regions are to be formed, thus exposing side surface portions of the semiconductor film. A gate insulating film and a gate electrode contacting the side surface portions and upper surface portions of the semiconductor film are then formed.

摘要翻译： 在以线状条状图案延伸的基板上形成凹凸部，除去与分离成岛状的结晶半导体膜相交的绝缘膜的凸部，在绝缘膜上形成非晶半导体膜。 半导体膜熔化并流入绝缘膜的凹部，在其中结晶，并且残留在绝缘膜的凸部上的半导体膜被去除。 然后，从形成在凹部中的半导体膜形成分成岛状的半导体膜，在要形成沟道形成区域的部分去除绝缘膜的凸部，从而露出半导体膜的侧表面部分。 然后形成与半导体膜的侧表面部分和上表面部分接触的栅极绝缘膜和栅电极。

公开(公告)号：US06847050B2

公开(公告)日：2005-01-25

申请号：US10387410

申请日：2003-03-14

申请人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

发明人： Shunpei Yamazaki ,  Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa ,  Yutaka Shionoiri ,  Hiroyuki Miyake

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78696

摘要： A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.

摘要翻译： 提供能够高速运行，电流驱动能力高，多个元件之间波动小的半导体元件，以及包括半导体元件的半导体器件。 半导体元件具有包括多个晶体取向的第一晶体半导体区域，而绝缘表面实际上不具有晶界，第一晶体半导体区域被设置为共同连接到包括第一晶体半导体区域的导电区域和第二晶体半导体区域 区域，其中导电区域被设​​置成跨过线性条纹图案延伸的绝缘膜。

公开(公告)号：US20050205869A1

公开(公告)日：2005-09-22

申请号：US11107822

申请日：2005-04-18

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

公开(公告)号：US06933527B2

公开(公告)日：2005-08-23

申请号：US10330025

申请日：2002-12-27

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/104 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

摘要翻译： 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

公开(公告)号：US06884668B2

公开(公告)日：2005-04-26

申请号：US10370055

申请日：2003-02-21

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00 ,  H01L29/04

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

摘要翻译： 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。

公开(公告)号：US07795734B2

公开(公告)日：2010-09-14

申请号：US11636598

申请日：2006-12-11

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

摘要翻译： 为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中 具有高电流驱动性能，并且元件之间波动较小。 本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。

公开(公告)号：US07749818B2

公开(公告)日：2010-07-06

申请号：US10352233

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/148 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/785 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成条纹形状或矩形形状不均匀或开口。 然后将连续波激光照射到形成在绝缘膜上的半导体膜。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波振荡激光。