发明授权
US07713353B2 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
有权
＆lt; Ga 2 O 3单晶生长法，薄膜单晶生长法，Ga 2 O 3发光元件及其制造方法
- 专利标题： β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
- 专利标题（中）： ＆lt; Ga 2 O 3单晶生长法，薄膜单晶生长法，Ga 2 O 3发光元件及其制造方法
-
申请号： US12155991申请日： 2008-06-12
-
公开(公告)号： US07713353B2公开(公告)日： 2010-05-11
- 发明人: Noboru Ichinose , Kiyoshi Shimamura , Kazuo Aoki , Encarnacion Antonia Garcia Villora
- 申请人： Noboru Ichinose , Kiyoshi Shimamura , Kazuo Aoki , Encarnacion Antonia Garcia Villora
- 申请人地址： JP Tokyo
- 专利权人： Waseda University
- 当前专利权人： Waseda University
- 当前专利权人地址： JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2003-046552 20030224; JP2003-066020 20030312; JP2003-137916 20030515
- 主分类号： C30B28/12
- IPC分类号： C30B28/12 ; C30B25/00 ; C30B29/24 ; H01L27/15
摘要：
A method for growing a β-Ga2O3 single includes preparing a β-Ga2O3 seed crystal and growing the β-Ga2O3 single crystal from the β-Ga2O3 seed crystal in a predetermined direction.
公开/授权文献
信息查询
