摘要:
A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.
摘要:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
摘要翻译:发光元件具有在衬底上形成的氧化镓衬底和pn结。 衬底是由以下各项表示的氧化镓:(AlXInYGa(1-X-Y))2O3,其中0 <= x <= 1,0,0 <= y <= 1,0 <= x + y <= 1。 pn结具有第一导电型衬底和与第一导电类型相反的第二导电类型的GaN系化合物半导体薄膜。
摘要:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
摘要翻译:发光元件具有在衬底上形成的氧化镓衬底和pn结。 基底是由以下物质表示的氧化镓:(Al x Y y)(1-XY)2) 0 <= x <= 1,0 <= y <= 1,0 <= x + y <= 1。 pn结具有第一导电型衬底和与第一导电类型相反的第二导电类型的GaN系化合物半导体薄膜。
摘要:
A method for growing a β-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a β-Ga2O3 single crystal is grown in one direction selected from among the a-axis direction, the b-axis direction, and the c-axis direction. A thin film of a β-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a β-Ga2O3 single crystal is grown on a substrate of a β-Ga2O3 single crystal A light-emitting device comprises an n-type substrate produced by doping a β-Ga2O3 single crystal with an n-type dopant and a p-type layer produced by doping the β-Ga2O3 single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.
摘要翻译:用于生长β-Ga 2 O 3 N 3单晶的方法几乎不会开裂并且具有弱的孪晶倾向和改善的结晶度,生长薄膜单晶的方法 具有高质量的能够在紫外区域发射光的Ga 3 O 3 O 3 3发光器件及其制造方法。 在红外线加热单晶体制造系统中,将晶种和多晶材料沿相反的方向旋转并加热,β-Ga 2 O 3单晶为 沿从a轴<100>方向,b轴<010方向和c轴<001>方向选择的一个方向生长。 由PLD形成β-Ga 2 O 3/3单晶的薄膜。 将激光束施加到靶上以激发构成目标的原子,通过热和光化学作用将靶原子释放出靶。 游离的Ga原子与腔中的大气中的自由基结合。 因此,β-Ga 2 O 3单晶的薄膜生长在β-Ga 2 O 3 O 3的底物上 > 3 sub>单晶A发光器件包括通过掺杂具有n型的β-Ga 2 O 3 N 3单晶制造的n型衬底 掺杂剂和p型层,其通过用p型掺杂剂掺杂β-Ga 2 O 3 N 3单晶而结合到n型衬底的顶部 。 发光装置从接合部发射光。
摘要:
A method of growing a p-type thin film of β-Ga2O3 includes preparing a substrate including a β-Ga2O3 single crystal, and growing a p-type thin film of β-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.
摘要翻译:生长p型-Ga 2 O 3的p型薄膜的方法包括制备包括&lt; bGa-Ga 2 O 3单晶的衬底,以及在衬底上生长p型-Ga 2 O 3薄膜。 p型薄膜以从H,Li,Na,K,Rb,Cs,Fr,Be,Mg,Ca,Sr,Ba中选择的p型掺杂剂代替薄膜中的Ga而生长 ,Ra,Mn,Fe,Co,Ni,Pd,Cu,Ag,Au,Zn,Cd,Hg,Tl和Pb。
摘要:
A method for growing a β-Ga2O3 single includes preparing a β-Ga2O3 seed crystal and growing the β-Ga2O3 single crystal from the β-Ga2O3 seed crystal in a predetermined direction.
摘要翻译:一种用于生长一种Ga 2 O 3单晶的方法包括制备一种Ga 2 O 3晶种,并沿着预定方向从该Ga 2-x Ga 2 O 3晶种生长该-Ga 2 O 3单晶。
摘要:
To provide a Ga2O3 compound semiconductor device in which a Ga2O3 system compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the Ga2O3 system compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary.An n-side electrode 20 including at least a Ti layer is formed on a lower surface of an n-type β-Ga2O3 substrate 2 by utilizing a PLD method. This n-side electrode 20 has ohmic characteristics at 25° C. The n-side electrode 20 may have two layer including a Ti layer and an Au layer, three layers including a Ti layer, an Al layer and an Au layer, or four layers including a Ti layer, an Al layer, a Ni layer and an Au layer.
摘要翻译:为了提供其中使用Ga 2 O 3 O 3系统化合物的Ga 2 O 3 O 3系化合物半导体器件作为 具有适于Ga 2 O 3系统化合物的具有欧姆特性的电极的半导体,并且其可以进行热处理以获得不必要的欧姆特性。 通过利用PLD法在n型β-Ga 2 O 3衬底2的下表面上形成至少包含Ti层的n侧电极20 。 该n侧电极20在25℃下具有欧姆特性.n侧电极20可以具有包括Ti层和Au层的两层,包括Ti层,Al层和Au层的三层或四层 层包括Ti层,Al层,Ni层和Au层。
摘要:
A method of growing a p-type thin film of β-Ga2O3 includes preparing a substrate including a β-Ga2O3 single crystal, and growing a p-type thin film of β-Ga2O3 on the substrate. The p-type thin film is grown in a manner that Ga in the thin film is replaced by a p-type dopant selected from H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, and Pb.
摘要翻译:生长p型-Ga 2 O 3的p型薄膜的方法包括制备包括&lt; bGa-Ga 2 O 3单晶的衬底,以及在衬底上生长p型-Ga 2 O 3薄膜。 p型薄膜以从H,Li,Na,K,Rb,Cs,Fr,Be,Mg,Ca,Sr,Ba中选择的p型掺杂剂代替薄膜中的Ga而生长 ,Ra,Mn,Fe,Co,Ni,Pd,Cu,Ag,Au,Zn,Cd,Hg,Tl和Pb。
摘要:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1-X-Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
摘要:
A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1−X−Y))2O3 where 0≦x≦1, 0≦y≦1 and 0≦x+y≦1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.
摘要翻译:发光元件具有在衬底上形成的氧化镓衬底和pn结。 基底是由以下物质表示的氧化镓:(Al x Y y)(1-XY)2) 0 <= x <= 1,0 <= y <= 1,0 <= x + y <= 1。 pn结具有第一导电型衬底和与第一导电类型相反的第二导电类型的GaN系化合物半导体薄膜。