β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
    4.
    发明授权
    β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method 有权
    β-Ga 2 O 3单晶生长法,薄膜单晶生长法,Ga 2 O 3发光元件及其制造方法

    公开(公告)号:US07393411B2

    公开(公告)日:2008-07-01

    申请号:US10546484

    申请日:2004-02-16

    IPC分类号: C30B23/00 H01L27/15

    摘要: A method for growing a β-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a GazO3 light-emitting device capable of emitting a light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and polycrystalline material are rotated in mutually opposite directions and heated, and a β-Ga2O3 single crystal is grown in one direction selected from among the a-axis direction, the b-axis direction, and the c-axis direction. A thin film of a β-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target Ga atoms are released from the target by thermal and photochemical actions. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin film of a β-Ga2O3 single crystal is grown on a substrate of a β-Ga2O3 single crystal A light-emitting device comprises an n-type substrate produced by doping a β-Ga2O3 single crystal with an n-type dopant and a p-type layer produced by doping the β-Ga2O3 single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits a light from the junction portion.

    摘要翻译: 用于生长β-Ga 2 O 3 N 3单晶的方法几乎不会开裂并且具有弱的孪晶倾向和改善的结晶度,生长薄膜单晶的方法 具有高质量的能够在紫外区域发射光的Ga 3 O 3 O 3 3发光器件及其制造方法。 在红外线加热单晶体制造系统中,将晶种和多晶材料沿相反的方向旋转并加热,β-Ga 2 O 3单晶为 沿从a轴<100>方向,b轴<010方向和c轴<001>方向选择的一个方向生长。 由PLD形成β-Ga 2 O 3/3单晶的薄膜。 将激光束施加到靶上以激发构成目标的原子,通过热和光化学作用将靶原子释放出靶。 游离的Ga原子与腔中的大气中的自由基结合。 因此,β-Ga 2 O 3单晶的薄膜生长在β-Ga 2 O 3 O 3的底物上 > 3 单晶A发光器件包括通过掺杂具有n型的β-Ga 2 O 3 N 3单晶制造的n型衬底 掺杂剂和p型层,其通过用p型掺杂剂掺杂β-Ga 2 O 3 N 3单晶而结合到n型衬底的顶部 。 发光装置从接合部发射光。