发明授权
- 专利标题: Method for forming an improved low power SRAM contact
- 专利标题(中): 形成改进的低功率SRAM触点的方法
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申请号: US11800503申请日: 2007-05-07
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公开(公告)号: US07714392B2公开(公告)日: 2010-05-11
- 发明人: Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
- 申请人: Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Thomas, Kayden, Horstemeyer & Risley
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A semiconductor device includes a semiconducting substrate having CMOS transistors thereon. A composite etch stop layer including a lowermost silicon oxynitride portion and an uppermost silicon nitride portion is disposed on the semiconducting substrate including the CMOS transistors. At least one dielectric layer is on the composite etch stop layer. A first contact opening extends to a first level through the composite etch stop layer thickness and a second contact opening extends to a second level deeper than the first level through the composite etch stop layer.
公开/授权文献
- US20070205414A1 Method for forming an improved low power SRAM contact 公开/授权日:2007-09-06