发明授权
- 专利标题： Forming integrated circuits with replacement metal gate electrodes
- 专利标题（中）： 用替换金属栅电极形成集成电路
-
申请号： US10925468申请日： 2004-08-25
-
公开(公告)号： US07718479B2公开(公告)日： 2010-05-18
- 发明人: Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew V. Metz , Suman Datta , Uday Shah , Robert S. Chau
- 申请人： Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew V. Metz , Suman Datta , Uday Shah , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the exposed portions of the sidewall spacers may be selectively removed. Finally, the lower portion of the stack may be removed to form a T-shaped trench which may be filled with the metal replacement.
公开/授权文献
信息查询
IPC分类:
