发明授权
US07723228B2 Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
有权
在Cu大马士革的介电阻挡层沉积之前减少小丘
- 专利标题： Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
- 专利标题（中）： 在Cu大马士革的介电阻挡层沉积之前减少小丘
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申请号： US10442359申请日： 2003-05-20
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公开(公告)号： US07723228B2公开(公告)日： 2010-05-25
- 发明人: Nagarajan Rajagopalan , Meiyee Shek , Kegang Huang , Bok Hoen Kim , Hichem M'saad , Thomas Nowak
- 申请人： Nagarajan Rajagopalan , Meiyee Shek , Kegang Huang , Bok Hoen Kim , Hichem M'saad , Thomas Nowak
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.
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