公开(公告)号：US08382885B2

公开(公告)日：2013-02-26

申请号：US12914822

申请日：2010-10-28

Applicant: Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Hichem M'Saad

Inventor： Dustin W. Ho ,  Juan Carlos Rocha-Alvarez ,  Hichem M'Saad

IPC: B01D53/02

CPC classification number: C23C16/4402 ,  C23C16/4481 ,  C23C16/52

Abstract: A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described.

Abstract translation: 用于过滤衬底处理设备中的流体的过滤器包括彼此连接的第一和第二阶段。 输送系统向过滤器提供蒸发的液体。 过滤器的第一阶段包括碱性化合物，并且过滤器的第二阶段包括干燥剂。 第二过滤器包括具有可渗透膜的渗透过滤器以过滤流体。 还描述了使用过滤器过滤流体以减少不期望的工艺残余物的形成的方法。

公开(公告)号：US08138104B2

公开(公告)日：2012-03-20

申请号：US11762590

申请日：2007-06-13

Applicant: Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

Inventor： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC: H01L21/469

CPC classification number: H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

Abstract: Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

Abstract translation: 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US07851384B2

公开(公告)日：2010-12-14

申请号：US11751516

申请日：2007-05-21

Applicant: Yijun Liu ,  Huiwen Xu ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

Inventor： Yijun Liu ,  Huiwen Xu ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/022 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76832

Abstract: Methods are provided for processing a substrate comprising a bilayer barrier film thereon. In one aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and ultraviolet curing the dielectric layer. In another aspect, a method comprises depositing a first barrier layer, depositing a second barrier layer on the first barrier layer, depositing a dielectric layer on the bilayer barrier film formed by the first barrier layer and the second barrier layer, and curing the dielectric layer with an electron beam treatment.

Abstract translation: 提供了用于处理其上包含双层阻挡膜的基材的方法。 一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及紫外线固化电介质 层。 在另一方面，一种方法包括沉积第一阻挡层，在第一阻挡层上沉积第二阻挡层，在由第一阻挡层和第二阻挡层形成的双层阻挡膜上沉积介电层，以及使介电层 用电子束处理。

公开(公告)号：US07723228B2

公开(公告)日：2010-05-25

申请号：US10442359

申请日：2003-05-20

Applicant: Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

Inventor： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'saad ,  Thomas Nowak

IPC: H01L21/4763

CPC classification number: H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

Abstract: Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

Abstract translation: 由于形成覆盖势垒层而在铜层中产生的不希望的小丘可以通过单独或组合优化各种工艺参数而显着降低。 可以控制第一组工艺参数以对其中沉积阻挡层的处理室进行预处理。 可以控制第二组工艺参数，以在阻挡层沉积之前最小化去除CuO期间铜层暴露的能量。 可以控制第三组工艺参数以最小化除去氧化铜后的热预算。

公开(公告)号：US07718081B2

公开(公告)日：2010-05-18

申请号：US11422031

申请日：2006-06-02

Applicant: Wei Liu ,  Jim Zhongyi He ,  Sang H. Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy H. Yeh ,  Christopher D. Bencher

Inventor： Wei Liu ,  Jim Zhongyi He ,  Sang H. Ahn ,  Meihua Shen ,  Hichem M'Saad ,  Wendy H. Yeh ,  Christopher D. Bencher

IPC: C23F1/00 ,  B44C1/22 ,  G03C5/00 ,  H01L21/302 ,  C03C25/68

CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146

Abstract: A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.

Abstract translation: 提供蚀刻基板的方法。 蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。 任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

公开(公告)号：US20090104764A1

公开(公告)日：2009-04-23

申请号：US11876649

申请日：2007-10-22

Applicant: Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

Inventor： Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Derek R. Witty ,  Hichem M'Saad ,  Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

IPC: H01L21/3205 ,  C23F1/00 ,  H01L21/311

CPC classification number: H01L21/3185 ,  H01L21/31116 ,  H01L21/3143 ,  H01L21/76829 ,  H01L21/76832 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.

Abstract translation: 一种用于形成结构的方法包括在衬底的表面上形成至少一个特征。 在至少一个特征上形成含氮介电层。 在至少一个特征的至少一个侧壁上的含氮层的第一部分以第一速率除去，并且含氮层的第二部分在邻近至少一个特征的底部区域的衬底上 以第二速率被去除。 第一个比率大于第二个比率。 在含氮介电层上形成介电层。

公开(公告)号：US20090093100A1

公开(公告)日：2009-04-09

申请号：US11869409

申请日：2007-10-09

Applicant: Li-Qun Xia ,  Huiwen Xu ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Li-Qun Xia ,  Huiwen Xu ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/76

CPC classification number: H01L21/76831 ,  C23C16/325 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76804 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885 ,  H01L2221/1036

Abstract: The present invention generally provides a method for forming multilevel interconnect structures, including multilevel interconnect structures that include an air gap. One embodiment provides a method for forming conductive lines in a semiconductor structure comprising forming trenches in a first dielectric layer, wherein air gaps are to be formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film comprises a low k dielectric material configured to serve as a barrier against a wet etching chemistry used in forming the air gaps in the first dielectric layer, depositing a metallic diffusion barrier film over the conformal low k dielectric layer, and depositing a conductive material to fill the trenches.

Abstract translation: 本发明通常提供一种用于形成多层互连结构的方法，包括包括气隙的多层互连结构。 一个实施例提供了一种用于在半导体结构中形成导线的方法，包括在第一介电层中形成沟槽，其中在第一介电层中形成气隙，在沟槽中沉积共形介电阻挡膜，其中保形介电阻挡层 薄膜包括低k电介质材料，其被配置为用作抵抗用于形成第一介电层中的气隙的湿蚀刻化学物质的阻挡层，在保形低k电介质层上沉积金属扩散阻挡膜，并将导电材料沉积到 填补沟渠。

公开(公告)号：US07501355B2

公开(公告)日：2009-03-10

申请号：US11478273

申请日：2006-06-29

Applicant: Ritwik Bhatia ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

Inventor： Ritwik Bhatia ,  Li-Qun Xia ,  Chad Peterson ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0332 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76829

Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.

Abstract translation: 提供了形成氮化硅硬掩模的方法。 氮化硅硬掩模包括碳掺杂的氮化硅层和未掺杂的氮化硅层。 提供了在RF功率存在下由包含碳源化合物，硅源化合物和氮源的混合物沉积的碳掺杂氮化硅层。 还提供了UV后处理氮化硅层以提供氮化硅硬掩模的方法。 碳掺杂的氮化硅层和UV后处理的氮化硅层对于硬掩模层具有期望的湿蚀刻速率和干蚀刻速率。

公开(公告)号：US20090044753A1

公开(公告)日：2009-02-19

申请号：US12255638

申请日：2008-10-21

Applicant: Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Deenesh Padhi ,  Chiu Chan ,  Sudha Rathi ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Karthik Janakiraman ,  Martin J. Seamons ,  Visweswaren Sivaramakrishnan ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/30

CPC classification number: C23C16/45565 ,  C23C16/0254 ,  C23C16/26 ,  C23C16/4404

Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.

Abstract translation: 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。

公开(公告)号：US20090017640A1

公开(公告)日：2009-01-15

申请号：US12171783

申请日：2008-07-11

Applicant: Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

Inventor： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

IPC: H01L21/469 ,  B05D3/02 ,  H05H1/00 ,  C08F2/46

CPC classification number: C23C16/28 ,  C23C16/56 ,  H01L21/314 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

Abstract: Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about −10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.

Abstract translation: 提供形成含硼膜的方法。 所述方法包括将含硼前体引入室中，并通过热分解或等离子体处理将包含硼 - 硼键的网络沉积在衬底上。 可以对网络进行后处理以从网络中除去氢，并增加所得含硼膜的应力。 含硼膜的应力在约-10GPa和10GPa之间，可用作硼源层或应变诱导层。