发明授权
- 专利标题: Rinsing fluid for lithography
- 专利标题(中): 用于光刻的冲洗液
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申请号: US11587268申请日: 2005-04-20
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公开(公告)号: US07741260B2公开(公告)日: 2010-06-22
- 发明人: Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
- 申请人: Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
- 申请人地址: JP Kanagawa
- 专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人: Tokyo Ohka Kogyo Co., Ltd.
- 当前专利权人地址: JP Kanagawa
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP2004-129096 20040423
- 国际申请: PCT/JP2005/007504 WO 20050420
- 国际公布: WO2005/103831 WO 20051103
- 主分类号: C11D7/32
- IPC分类号: C11D7/32
摘要:
The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
公开/授权文献
- US20080026975A1 Rinsing Fluid for Lithography 公开/授权日:2008-01-31
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