公开(公告)号：US08367312B2

公开(公告)日：2013-02-05

申请号：US12087545

申请日：2006-12-08

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

IPC分类号： C11D7/32 ,  C11D1/75

CPC分类号： G03F7/322

摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。

公开(公告)号：US20120084034A1

公开(公告)日：2012-04-05

申请号：US13237019

申请日：2011-09-20

申请人： Yoshiaki Hiratsuka ,  Yoshihiro Sawada ,  Kenji Nagase ,  Tomoyuki Nakao ,  Keisuke Nakamura

发明人： Yoshiaki Hiratsuka ,  Yoshihiro Sawada ,  Kenji Nagase ,  Tomoyuki Nakao ,  Keisuke Nakamura

IPC分类号： G06F19/00

CPC分类号： G06F17/5081 ,  G06F17/5036 ,  G06F2217/82 ,  H05K1/023 ,  H05K3/0005

摘要： A design check method executed by a computer includes determining a countermeasure component provided in a certain range from a terminal of a reference component, determining whether a terminal of the determined countermeasure component is electrically connected to the terminal of the reference component, and determining that the countermeasure component is suitably mounted when the terminal of the determined countermeasure component that is electrically connected to the terminal of the reference component is at least within the certain range.

摘要翻译： 由计算机执行的设计检查方法包括从参考部件的终端确定在一定范围内提供的对策部件，确定所确定的对策部件的终端是否电连接到所述参考部件的终端，以及确定 当与参考部件的端子电连接的所确定的对策部件的端子至少在一定范围内时，适当地安装对策部件。

公开(公告)号：US20110189833A1

公开(公告)日：2011-08-04

申请号：US13016637

申请日：2011-01-28

申请人： Yoshihiro SAWADA

发明人： Yoshihiro SAWADA

IPC分类号： H01L21/764 ,  C08L83/04

CPC分类号： C08L83/04 ,  H01L21/764

摘要： Provided is a silica-based film forming material for formation of air gaps, the material being capable of forming air gaps without employing a CVD method. A silica-based film forming material for formation of air gaps including (a) a certain siloxane polymer, (b) an alkanolamine, and (c) an organic solvent is used when a silica-based film is formed with a spin coating method. According to this silica-based film forming material for formation of air gaps, air gaps with a great degree of opening can be formed even when coated with a spin coating method, without filling the recessed parts.

摘要翻译： 提供了用于形成气隙的二氧化硅基成膜材料，该材料能够在不使用CVD方法的情况下形成气隙。 当用旋涂法形成二氧化硅基膜时，使用形成气隙的二氧化硅基成膜材料，包括（a）某种硅氧烷聚合物，（b）链烷醇胺和（c）有机溶剂。 根据这种用于形成气隙的二氧化硅基成膜材料，即使用旋涂法涂布也可以形成具有大的开口的气隙，而不填充凹部。

公开(公告)号：US20080096141A1

公开(公告)日：2008-04-24

申请号：US11791723

申请日：2005-11-29

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Atsushi Miyamoto ,  Hidekazu Tajima

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Atsushi Miyamoto ,  Hidekazu Tajima

IPC分类号： G03C5/56 ,  G03C11/00

CPC分类号： G03F7/40

摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.

摘要翻译： 本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力 抑制图案收缩。 此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。 用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。

公开(公告)号：US5976705A

公开(公告)日：1999-11-02

申请号：US768293

申请日：1996-12-17

申请人： Ichiro Koiwa ,  Juro Mita ,  Takao Kanehara ,  Akira Hashimoto ,  Yoshihiro Sawada

发明人： Ichiro Koiwa ,  Juro Mita ,  Takao Kanehara ,  Akira Hashimoto ,  Yoshihiro Sawada

IPC分类号： C04B35/48 ,  C04B35/622 ,  H01B3/00 ,  H01B3/12 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  B32B17/00

CPC分类号： H01L21/31691 ,  C04B35/62218 ,  H01L28/56

摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0

摘要翻译： 本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。 本文提供了包含PbZrxTi1-xSbyO3（其中0

公开(公告)号：US08790990B2

公开(公告)日：2014-07-29

申请号：US13016637

申请日：2011-01-28

申请人： Yoshihiro Sawada

发明人： Yoshihiro Sawada

IPC分类号： H01L21/76

CPC分类号： C08L83/04 ,  H01L21/764

摘要： Provided is a silica-based film forming material for formation of air gaps, the material being capable of forming air gaps without employing a CVD method. A silica-based film forming material for formation of air gaps including (a) a certain siloxane polymer, (b) an alkanolamine, and (c) an organic solvent is used when a silica-based film is formed with a spin coating method. According to this silica-based film forming material for formation of air gaps, air gaps with a great degree of opening can be formed even when coated with a spin coating method, without filling the recessed parts.

摘要翻译： 提供了用于形成气隙的二氧化硅基成膜材料，该材料能够在不使用CVD方法的情况下形成气隙。 当用旋涂法形成二氧化硅基膜时，使用用于形成气隙的二氧化硅基成膜材料，包括（a）某种硅氧烷聚合物，（b）链烷醇胺和（c）有机溶剂。 根据这种用于形成气隙的二氧化硅基成膜材料，即使用旋涂法涂布也可以形成具有大的开口的气隙，而不填充凹部。

公开(公告)号：US07811748B2

公开(公告)日：2010-10-12

申请号：US11587252

申请日：2005-04-20

申请人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

发明人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

IPC分类号： G03F7/40 ,  C11D7/32

CPC分类号： G03F7/40

摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.

摘要翻译： 基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。 通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法 相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。

公开(公告)号：US20100097376A1

公开(公告)日：2010-04-22

申请号：US12641902

申请日：2009-12-18

申请人： Yoshihiro Sawada

发明人： Yoshihiro Sawada

IPC分类号： G06T17/00

CPC分类号： G06F17/5018

摘要： A design support apparatus includes: a section that sets, as a reference plane in a virtual space, the plane of a mesh which is selected as a first mesh, from among meshes forming the shape of an object model displayed in the virtual space; a section that sets a vertex of the first mesh as a reference point; a section that sets a side of the first mesh that includes the reference point as a first axis and sets a axis other than the first axis that is included in the reference plane and passes the reference point as a second axis to set the first and second axes as coordinate axes; a section that sets the dimension of each coordinate axis; and a section that displays, in addition to the object model, the coordinate axes and the dimensions as a coordinate system of the reference plane.

摘要翻译： 一种设计支持装置，包括：从形成虚拟空间中显示的对象模型的形状的网格中，将在虚拟空间中作为第一网格选择的网格的平面设置为虚拟空间中的基准面的部分; 将第一个网格的顶点设置为参考点的部分; 将包括参考点的第一网格的一侧设置为第一轴的部分，并且将包括在参考平面中的第一轴以外的轴设置为第二轴，并将参考点设置为第二轴 轴为坐标轴; 设置每个坐标轴的尺寸的部分; 以及除了对象模型之外还显示坐标轴和尺寸作为参考平面的坐标系的部分。

公开(公告)号：US20090004608A1

公开(公告)日：2009-01-01

申请号：US12087545

申请日：2006-12-08

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Hidekazu Tajima ,  Atsushi Miyamoto ,  Tomoya Kumagai ,  Atsushi Sawano

IPC分类号： G03F7/20 ,  C11D7/32

CPC分类号： G03F7/322

摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。

公开(公告)号：US20080193876A1

公开(公告)日：2008-08-14

申请号：US11661426

申请日：2005-08-29

申请人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Atsushi Miyamoto ,  Hidekazu Tajima

发明人： Yoshihiro Sawada ,  Kazumasa Wakiya ,  Jun Koshiyama ,  Atsushi Miyamoto ,  Hidekazu Tajima

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： H01L21/0273 ,  G03F7/32

摘要： This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and, at the same time, can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern, and a method for resist pattern formation using the same. A resist pattern is formed by preparing a rinsing liquid for lithography comprising an aqueous solution containing (A) a water-soluble and/or alkali-soluble polymer having a nitrogen atom in its molecular structure and (B) at least one member selected from aliphatic alcohols and alkyletherification products thereof, and then carrying out (1) the step of providing a photoresist film on a substrate, (2) the step of selectively exposing the photoresist film thorough a mask pattern, (3) the step of heat-treating the exposed photoresist film, (4) the step of carrying out alkali development, and (5) the step of treating the developed film with the rinsing liquid for lithography.

摘要翻译： 本发明提供了一种新颖的光刻冲洗液，其中光致抗蚀剂图案可以减少表面缺陷，即所谓的缺陷，而不会牺牲产品的质量，并且同时可赋予电子束照射 以抑制抗蚀剂图案的收缩，以及使用其的抗蚀剂图案形成方法。 通过制备用于光刻的冲洗液，通过制备含有（A）在其分子结构中具有氮原子的水溶性和/或碱溶性聚合物的水溶液形成抗蚀剂图案，（B）至少一种选自脂肪族 醇和烷基醚化产物，然后进行（1）在基板上提供光致抗蚀剂膜的步骤，（2）通过掩模图案选择性地曝光光致抗蚀剂膜的步骤，（3）热处理 暴露的光致抗蚀剂膜，（4）进行碱显影的步骤，（5）用用于光刻的冲洗液处理显影膜的步骤。