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    Rinsing fluid for lithography
    1.
    发明授权
    Rinsing fluid for lithography 失效
    用于光刻的冲洗液

    公开(公告)号：US07741260B2

    公开(公告)日：2010-06-22

    申请号：US11587268

    申请日：2005-04-20

    申请人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    发明人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    IPC分类号： C11D7/32

    CPC分类号： G03F7/32 ,  C11D3/245 ,  C11D3/349 ,  C11D11/0041 ,  G03F7/322

    摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.

    摘要翻译： 本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。 冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式 式：Rf'-COOH：其中R 1和R 2各自是氢或被氟部分或全部取代的任选取代的C 1-5烷基，或者R 1和R 2与它们所键合的SO 2基团和氮原子可形成 五元或六元环; Rf是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; Rf'为至少部分氟化的碳原子数为8〜20的烷基。

    Rinsing Fluid for Lithography
    2.
    发明申请
    Rinsing Fluid for Lithography 失效
    用于平版印刷的冲洗液

    公开(公告)号：US20080026975A1

    公开(公告)日：2008-01-31

    申请号：US11587268

    申请日：2005-04-20

    申请人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    发明人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    IPC分类号： G03F7/32 ,  H01L21/027

    CPC分类号： G03F7/32 ,  C11D3/245 ,  C11D3/349 ,  C11D11/0041 ,  G03F7/322

    摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.

    摘要翻译： 本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。 冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式 其中R 1和R 2各自是任选取代的C 1-5烷基， 其氢原子部分或全部被氟取代的烷基，或R 1和R 2与它们所键合的SO 2 H 2基团一起 并且氮原子可以形成五元或六元环; R f是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; 且R f'是至少部分氟化的具有8至20个碳原子的烷基。

    Resist pattern forming method and composite rinse agent
    3.
    发明授权
    Resist pattern forming method and composite rinse agent 有权
    抗蚀剂图案形成方法和复合漂洗剂

    公开(公告)号：US07811748B2

    公开(公告)日：2010-10-12

    申请号：US11587252

    申请日：2005-04-20

    申请人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    发明人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    IPC分类号： G03F7/40 ,  C11D7/32

    CPC分类号： G03F7/40

    摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.

    摘要翻译： 基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。 通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法 相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。

    Rinse Solution For Lithography
    4.
    发明申请
    Rinse Solution For Lithography 审中-公开
    冲洗液用于平版印刷

    公开(公告)号：US20070218412A1

    公开(公告)日：2007-09-20

    申请号：US11587253

    申请日：2005-04-20

    申请人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Yoshihiro Sawada ,  Hidekazu Tajima

    发明人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Yoshihiro Sawada ,  Hidekazu Tajima

    IPC分类号： G03F7/32 ,  H01L21/027

    CPC分类号： G03F7/322 ,  G03F7/32 ,  G03F7/40

    摘要： A novel rinse solution for lithography to be used for suppressing contraction of a pattern and a method for forming a resist pattern using the rinse solution are provided, by reducing product surface defects of a photoresist pattern and providing the photoresist pattern with resistance to electronic beam irradiation. The rinse solution for lithography composed of a solution including a water-soluble resin having a nitrogen atom in a molecular structure is prepared. The resist pattern is formed with the rinse solution by performing (A) a process of providing a photoresist film on a board, (B) a process of selectively exposing the photoresist film through a mask pattern, (C) a process of performing post exposure bake (PEB), (D) a process of alkaline development, and (E) a process of treatment with the rinse solution for lithography.

    摘要翻译： 提供了用于抑制图案收缩的新颖的用于光刻的冲洗溶液和使用该冲洗溶液形成抗蚀剂图案的方法，通过减少光致抗蚀剂图案的产品表面缺陷并提供抗电子束照射的抗蚀剂图案 。 制备由包含分子结构中具有氮原子的水溶性树脂的溶液构成的平版印刷用溶液。 通过执行（A）在基板上提供光致抗蚀剂膜的工艺，（B）通过掩模图案选择性地曝光光致抗蚀剂膜的工艺，（C）进行曝光后处理的工艺，由冲洗液形成抗蚀剂图案 烘烤（PEB），（D）碱性显影过程，（E）用于光刻的冲洗溶液的处理过程。

    Resist Pattern Forming Method and Composite Rinse Agent
    5.
    发明申请
    Resist Pattern Forming Method and Composite Rinse Agent 有权
    抗蚀剂图案形成方法和复合漂洗剂

    公开(公告)号：US20070218399A1

    公开(公告)日：2007-09-20

    申请号：US11587252

    申请日：2005-04-20

    申请人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    发明人： Jun Koshiyama ,  Kazumasa Wakiya ,  Fumitake Kaneko ,  Atsushi Miyamoto ,  Hidekazu Tajima ,  Yoshihiro Sawada

    IPC分类号： G03F7/32 ,  H01L21/027

    CPC分类号： G03F7/40

    摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.

    摘要翻译： 基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。 通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法 相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。

    Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent
    6.
    发明申请
    Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开

    公开(公告)号：US20060258809A1

    公开(公告)日：2006-11-16

    申请号：US11487330

    申请日：2006-07-17

    申请人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa ,  Kazumasa Wakiya

    发明人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa ,  Kazumasa Wakiya

    IPC分类号： C08L37/00 ,  B05D5/00

    CPC分类号： G03F7/40 ,  G03F7/0035

    摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.

    Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent
    7.
    发明申请
    Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开
    用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法

    公开(公告)号：US20090011601A1

    公开(公告)日：2009-01-08

    申请号：US12230914

    申请日：2008-09-08

    申请人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa ,  Kazumasa Wakiya

    发明人： Yoshiki Sugeta ,  Fumitake Kaneko ,  Toshikazu Tachikawa ,  Kazumasa Wakiya

    IPC分类号： H01L21/311 ,  C08L29/04 ,  C08L1/08 ,  C08F16/06

    CPC分类号： G03F7/40 ,  G03F7/0035

    摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.

    摘要翻译： 公开了一种用于形成细线图案的过涂层剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻光致抗蚀剂图案之间的间隔减小， 涂层剂基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有聚乙烯醇与聚乙烯醇以外的水溶性聚合物的共聚物或混合物。 还公开了使用过涂层剂形成细线图案的方法。 根据本发明，可以有效地提高试剂的收缩量（热收缩量），从而实现形成或限定细线图案的显着改善的效果，并且还具有令人满意的轮廓并满足当今的要求 半导体器件。