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公开(公告)号：US07741260B2
公开(公告)日：2010-06-22
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： C11D7/32
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译： 本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。 冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式 式：Rf'-COOH：其中R 1和R 2各自是氢或被氟部分或全部取代的任选取代的C 1-5烷基，或者R 1和R 2与它们所键合的SO 2基团和氮原子可形成 五元或六元环; Rf是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; Rf'为至少部分氟化的碳原子数为8〜20的烷基。
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公开(公告)号：US20080026975A1
公开(公告)日：2008-01-31
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译： 本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。 冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式 其中R 1和R 2各自是任选取代的C 1-5烷基， 其氢原子部分或全部被氟取代的烷基，或R 1和R 2与它们所键合的SO 2 H 2基团一起 并且氮原子可以形成五元或六元环; R f是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; 且R f'是至少部分氟化的具有8至20个碳原子的烷基。
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公开(公告)号：US07811748B2
公开(公告)日：2010-10-12
申请号：US11587252
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
CPC分类号： G03F7/40
摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.
摘要翻译： 基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。 通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法 相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。
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公开(公告)号：US20070218412A1
公开(公告)日：2007-09-20
申请号：US11587253
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Yoshihiro Sawada , Hidekazu Tajima
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Yoshihiro Sawada , Hidekazu Tajima
IPC分类号： G03F7/32 , H01L21/027
摘要： A novel rinse solution for lithography to be used for suppressing contraction of a pattern and a method for forming a resist pattern using the rinse solution are provided, by reducing product surface defects of a photoresist pattern and providing the photoresist pattern with resistance to electronic beam irradiation. The rinse solution for lithography composed of a solution including a water-soluble resin having a nitrogen atom in a molecular structure is prepared. The resist pattern is formed with the rinse solution by performing (A) a process of providing a photoresist film on a board, (B) a process of selectively exposing the photoresist film through a mask pattern, (C) a process of performing post exposure bake (PEB), (D) a process of alkaline development, and (E) a process of treatment with the rinse solution for lithography.
摘要翻译： 提供了用于抑制图案收缩的新颖的用于光刻的冲洗溶液和使用该冲洗溶液形成抗蚀剂图案的方法，通过减少光致抗蚀剂图案的产品表面缺陷并提供抗电子束照射的抗蚀剂图案 。 制备由包含分子结构中具有氮原子的水溶性树脂的溶液构成的平版印刷用溶液。 通过执行（A）在基板上提供光致抗蚀剂膜的工艺，（B）通过掩模图案选择性地曝光光致抗蚀剂膜的工艺，（C）进行曝光后处理的工艺，由冲洗液形成抗蚀剂图案 烘烤（PEB），（D）碱性显影过程，（E）用于光刻的冲洗溶液的处理过程。
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公开(公告)号：US20070218399A1
公开(公告)日：2007-09-20
申请号：US11587252
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/40
摘要： A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.
摘要翻译： 基于与传统图案塌陷防止方法完全不同的原理，制造高质量产品的方法，而不损害通过漂洗工艺形成的图案的物理性能。 通过对设置在基板上的光致抗蚀剂层进行成像曝光，然后在显影处理之后，形成抗蚀剂图案的所得层，通过降低接触角的方法来形成抗蚀剂图案的方法 相对于抗蚀剂图案表面上的接触液体达到40度，然后通过将其增加至至少70度，并进一步通过干燥。
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公开(公告)号：US07795197B2
公开(公告)日：2010-09-14
申请号：US11791723
申请日：2005-11-29
IPC分类号： C11D1/75
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译： 本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力 抑制图案收缩。 此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。 用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8-20个碳原子的烷基或羟烷基; R2和R3表示碳原子数1〜5的烷基或羟烷基。
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7.发明申请Lithographic rinse solution and method for forming patterned resist layer using the same 有权平版印刷冲洗液及其形成图案化抗蚀剂层的方法公开(公告)号：US20060128581A1
公开(公告)日：2006-06-15
申请号：US11296343
申请日：2005-12-08
IPC分类号： C11D9/00
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译： 本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。 本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。 任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。 本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。 本发明提供了关于产品质量和工艺效率的光刻工艺的改进。
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8.发明授权公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。
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9.发明申请公开(公告)号：US20080096141A1
公开(公告)日：2008-04-24
申请号：US11791723
申请日：2005-11-29
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译： 本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力 抑制图案收缩。 此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。 用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。
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10.发明授权Lithographic rinse solution and method for forming patterned resist layer using the same 有权平版印刷冲洗液及其形成图案化抗蚀剂层的方法公开(公告)号：US07897325B2
公开(公告)日：2011-03-01
申请号：US11296343
申请日：2005-12-08
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译： 本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。 本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。 任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。 本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。 本发明提供了关于产品质量和工艺效率的光刻工艺的改进。
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