发明授权
- 专利标题： Magnetoresistive element, magnetic head, magnetic recording apparatus, and magnetic memory
- 专利标题（中）： 磁阻元件，磁头，磁记录装置和磁存储器
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申请号： US11848374申请日： 2007-08-31
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公开(公告)号： US07742262B2公开(公告)日： 2010-06-22
- 发明人: Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
- 申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-224124 20040730
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; H01L29/76
摘要：
A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.
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