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1.发明授权公开(公告)号：US08130477B2
公开(公告)日：2012-03-06
申请号：US12879642
申请日：2010-09-10
IPC分类号： G11B5/36
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。
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公开(公告)号：US07808330B2
公开(公告)日：2010-10-05
申请号：US12027650
申请日：2008-02-07
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
CPC分类号： H03B15/006 , B82Y25/00 , G01S7/006 , G01S7/35 , G01S13/345 , G01S2013/936 , H01F10/3259 , H01F10/329 , Y10T428/24942
摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.
摘要翻译： 高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成， 中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流 膜包括磁化固定层，中间层和振荡层。
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3.发明授权公开(公告)号：US07602592B2
公开(公告)日：2009-10-13
申请号：US11441351
申请日：2006-05-26
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , G11B5/3903 , G11B5/3932 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675 , H01F10/3263 , H01F10/3272 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes at least three metallic magnetic layers, connection layers each provided between the metallic magnetic layers, and electrodes which supply a current perpendicularly to a plane of a stack of the metallic magnetic layers and the connection layers. A magnetization direction of a lowermost or uppermost metallic magnetic layer of the metallic magnetic layers is pinned, and a magnetization direction of an intermediate metallic magnetic layer is twisted such that magnetization directions of the lowermost and the uppermost metallic magnetic layers are made substantially orthogonal to each other at zero external field.
摘要翻译： 磁阻元件包括至少三个金属磁性层，各自设置在金属磁性层之间的连接层以及垂直于金属磁性层和连接层的堆叠平面提供电流的电极。 金属磁性层的最下层或最上层的金属磁性层的磁化方向被钉扎，并且中间金属磁性层的磁化方向被扭曲使得最下层和最上面的金属磁性层的磁化方向基本上与每个 其他在零外场。
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4.发明授权公开(公告)号：US07525776B2
公开(公告)日：2009-04-28
申请号：US11269878
申请日：2005-11-09
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3929 , H01F10/3259 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.
摘要翻译： 磁阻元件具有磁化固定层，其磁化方向基本上被固定在一个方向上，磁化自由层的磁化方向根据外部磁场而变化，并且包括绝缘层的间隔层设置在磁化被钉扎层 以及穿过绝缘层的磁化自由层和电流路径，位于间隔层下方的磁化固定层或磁化自由层，其包含由跨过其厚度延伸的晶界分离的晶粒，其中，假设面内位置 将每个晶粒的一端设定为0，将与晶粒的另一端相邻的晶界的面内位置设定为100，在晶粒的区域形成与晶粒对应的电流路径 范围在平面内的20到80之间。
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5.发明授权公开(公告)号：US07471492B2
公开(公告)日：2008-12-30
申请号：US10895844
申请日：2004-07-22
IPC分类号： G11B5/127
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。
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6.发明授权公开(公告)号：US07289305B2
公开(公告)日：2007-10-30
申请号：US11074643
申请日：2005-03-09
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译： 磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性 间隔层和无磁化层。
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7.发明授权公开(公告)号：US06754053B2
公开(公告)日：2004-06-22
申请号：US10108472
申请日：2002-03-29
申请人： Masatoshi Yoshikawa , Masashi Sahashi , Katsuhiko Koi , Hitoshi Iwasaki , Hiromi Yuasa , Hideaki Fukuzawa
发明人： Masatoshi Yoshikawa , Masashi Sahashi , Katsuhiko Koi , Hitoshi Iwasaki , Hiromi Yuasa , Hideaki Fukuzawa
IPC分类号： G11B5127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F41/325
摘要： A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the magnetically pinned layer and the non-magnetic intermediate layer. The sidewall layers are made of a high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a specular reflection effect against conduction electrons, thereby to prevent non-elastic scattering of electrons and missing of spin information on side surfaces of the magnetoresistance effect film.
摘要翻译： 包括磁性钉扎层，非磁性中间层和无磁性层的磁阻效应膜具有覆盖磁性被钉扎层和非磁性中间层的至少侧面的侧壁层。 侧壁层由具有对传导电子的镜面反射效应的高电阻氧化物，氮化物，氟化物，硼化物，硫化物或碳化物制成，从而防止电子的非弹性散射和在磁阻的侧表面上缺少自旋信息 效果片。
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公开(公告)号：US08048492B2
公开(公告)日：2011-11-01
申请号：US12086761
申请日：2006-12-20
CPC分类号： H01F41/305 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3166 , G11B5/398 , G11B5/3983 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/08 , H01L43/12 , Y10T428/1121
摘要： A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.
摘要翻译： 磁阻效应元件通过在第一磁性层上形成第一磁性层，包括绝缘层的间隔层和穿过绝缘层并传导电流的导电层，以及第二磁性层， 其中一部分用离子，等离子体或热处理，形成间隔层。
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公开(公告)号：US07897201B2
公开(公告)日：2011-03-01
申请号：US11703830
申请日：2007-02-08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/303 , H01F41/325
摘要： A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.
摘要翻译： 一种用于制造具有磁化固定层，非磁性中间层和顺序堆叠的无磁化层的磁阻效应元件的方法。 该方法包括：形成要成为磁化固定层和磁化自由层中的任一个的磁性层的至少一部分; 在所述磁性层的一部分上形成包括氧化物，氮化物和氟化物中的至少一种的功能层; 以及通过将功能层暴露于离子束和等离子体照射中的任一种来去除功能层的一部分。
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10.发明申请公开(公告)号：US20110019312A1
公开(公告)日：2011-01-27
申请号：US12879642
申请日：2010-09-10
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L27/224 , H01L27/228 , H01L43/12 , Y10T428/1121
摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.
摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。
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