发明授权
- 专利标题： Semiconductor device and method for forming same
- 专利标题（中）： 半导体器件及其形成方法
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申请号： US11830542申请日： 2007-07-30
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公开(公告)号： US07745273B2公开(公告)日： 2010-06-29
- 发明人: Michael Treu , Roland Rupp , Michael Rueb , Rudolf Elpelt
- 申请人： Michael Treu , Roland Rupp , Michael Rueb , Rudolf Elpelt
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dickstein, Shapiro, LLP.
- 主分类号： H01L21/337
- IPC分类号： H01L21/337 ; H01L21/425
摘要：
A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.
公开/授权文献
- US20090032848A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME 公开/授权日：2009-02-05
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