Semiconductor device and method for forming same
    1.
    发明授权
    Semiconductor device and method for forming same 有权
    半导体器件及其形成方法

    公开(公告)号:US07745273B2

    公开(公告)日:2010-06-29

    申请号:US11830542

    申请日:2007-07-30

    IPC分类号: H01L21/337 H01L21/425

    摘要: A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

    摘要翻译: 一种半导体器件的制造方法。 该方法包括提供导电类型的半导体本体,其中半导体主体包括第一表面。 在半导体本体中形成至少一个第二导电类型的掩埋区域,并且至少在第二导电类型的表面区域形成在半导体本体的第一表面处,其中形成掩埋区域和表面区域使得 它们彼此间隔开。 埋入区域通过深度注入第二导电类型的第一掺杂剂形成。

    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME 有权
    半导体器件及其形成方法

    公开(公告)号:US20090032848A1

    公开(公告)日:2009-02-05

    申请号:US11830542

    申请日:2007-07-30

    摘要: A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

    摘要翻译: 一种半导体器件的制造方法。 该方法包括提供导电类型的半导体本体,其中半导体主体包括第一表面。 在半导体本体中形成至少一个第二导电类型的掩埋区域,并且至少在第二导电类型的表面区域形成在半导体本体的第一表面处,其中形成掩埋区域和表面区域使得 它们彼此间隔开。 埋入区域通过深度注入第二导电类型的第一掺杂剂形成。

    TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE
    3.
    发明申请
    TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE 有权
    具有屏蔽结构的晶体管元件

    公开(公告)号:US20100264467A1

    公开(公告)日:2010-10-21

    申请号:US12426008

    申请日:2009-04-17

    IPC分类号: H01L29/812

    摘要: A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

    摘要翻译: 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子,漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构,用于控制在漏区和源区之间的漂移区中的接合区,至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中,并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

    SEMICONDUCTOR DEVICE WITH STRUCTURED CURRENT SPREAD REGION AND METHOD
    4.
    发明申请
    SEMICONDUCTOR DEVICE WITH STRUCTURED CURRENT SPREAD REGION AND METHOD 有权
    具有结构化电流传播区域和方法的半导体器件

    公开(公告)号:US20090078971A1

    公开(公告)日:2009-03-26

    申请号:US11858264

    申请日:2007-09-20

    摘要: A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The current spread portion and the first portions are arranged in a first plane on the drift portion, wherein the current spread portion surrounds at least partially the first portions. The semiconductor body further includes spaced apart body regions of a second conductivity type which are arranged on the current spread portion. Further, the doping concentration of the current spread portion is higher than the doping concentrations of the drift portion and of the first portions.

    摘要翻译: 公开了一种具有结构化电流扩展区域和方法的半导体器件。 一个实施例提供第一导电类型的漂移部分,第一导电类型的电流扩展部分和第一导电类型的第一部分。 电流扩展部分和第一部分布置在漂移部分上的第一平面中,其中电流扩展部分至少部分地围绕第一部分。 半导体本体还包括布置在电流扩展部分上的间隔开的第二导电类型的主体区域。 此外,电流扩展部分的掺杂浓度高于漂移部分和第一部分的掺杂浓度。

    Semiconductor device with structured current spread region and method
    6.
    发明授权
    Semiconductor device with structured current spread region and method 有权
    具有结构电流扩散区域和方法的半导体器件

    公开(公告)号:US07772621B2

    公开(公告)日:2010-08-10

    申请号:US11858264

    申请日:2007-09-20

    IPC分类号: H01L29/78

    摘要: A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The current spread portion and the first portions are arranged in a first plane on the drift portion, wherein the current spread portion surrounds at least partially the first portions. The semiconductor body further includes spaced apart body regions of a second conductivity type which are arranged on the current spread portion. Further, the doping concentration of the current spread portion is higher than the doping concentrations of the drift portion and of the first portions.

    摘要翻译: 公开了一种具有结构化电流扩展区域和方法的半导体器件。 一个实施例提供第一导电类型的漂移部分,第一导电类型的电流扩展部分和第一导电类型的第一部分。 电流扩展部分和第一部分布置在漂移部分上的第一平面中,其中电流扩展部分至少部分地围绕第一部分。 半导体本体还包括布置在电流扩展部分上的间隔开的第二导电类型的主体区域。 此外,电流扩展部分的掺杂浓度高于漂移部分和第一部分的掺杂浓度。

    Transistor component having a shielding structure
    7.
    发明授权
    Transistor component having a shielding structure 有权
    具有屏蔽结构的晶体管组件

    公开(公告)号:US08102012B2

    公开(公告)日:2012-01-24

    申请号:US12426008

    申请日:2009-04-17

    IPC分类号: H01L27/088

    摘要: A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.

    摘要翻译: 具有屏蔽结构的晶体管组件。 一个实施例提供了源极端子,漏极端子和控制端子。 第一导电类型的源极区域连接到源极端子。 第一导电类型的漏极区域连接到漏极端子。 漂移区设置在源区和排水区之间。 提供了结点控制结构,用于控制在漏区和源区之间的漂移区中的接合区,至少包括一个控制区。 屏蔽结构布置在结点控制结构和漏区之间的漂移区中,并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。 屏蔽区域与屏蔽电位端子相连。 所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。