Invention Grant
- Patent Title: Multi-chip semiconductor device
- Patent Title (中): 多芯片半导体器件
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Application No.: US12264970Application Date: 2008-11-05
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Publication No.: US07745921B2Publication Date: 2010-06-29
- Inventor: Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
- Applicant: Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corp.
- Current Assignee: Renesas Electronics Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-103012 20050331
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
Public/Granted literature
- US20090065929A1 MULTI-CHIP SEMICONDUCTOR DEVICE Public/Granted day:2009-03-12
Information query
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