发明授权
- 专利标题: Phase-separated dielectric structure fabrication process
- 专利标题(中): 相分离电介质结构制造工艺
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申请号: US11695131申请日: 2007-04-02
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公开(公告)号: US07754510B2公开(公告)日: 2010-07-13
- 发明人: Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
- 申请人: Yiliang Wu , Hadi K Mahabadi , Beng S Ong , Paul F Smith
- 申请人地址: US CT Norwalk
- 专利权人: Xerox Corporation
- 当前专利权人: Xerox Corporation
- 当前专利权人地址: US CT Norwalk
- 代理机构: Fay Sharpe LLP
- 代理商 Eugene O. Palazzo
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.
公开/授权文献
- US20080242112A1 PHASE-SEPARATED DIELECTRIC STRUCTURE FABRICATION PROCESS 公开/授权日:2008-10-02
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