摘要:
A graphical model is displayed. A location of a portion of a user in relation to the displayed graphical model is sensed to obtain a sensed location of the portion of the user. A movement of the portion of the user in relation to the displayed graphical model and the sensed location of the portion of the user is sensed to obtain a sensed movement. The displayed graphical model is adjusted in response to the sensed movement of the portion of the user to obtain a displayed adjusted graphical model.
摘要:
Materials and methods for long term stability of records using metal nanoparticle-containing inks printed on durable substrates or media, including records generated by the disclosed methods, are described.
摘要:
A nanoscale pigment particle composition includes a fluorescent compound, such as a benzothioxanthene pigment, including at least one functional moiety, and a stabilizer compound including at least one functional group, wherein the functional moiety associates non-covalently with the functional group; and the presence of the associated stabilizer limits the extent of particle growth and aggregation, to afford nanoscale-sized particles.
摘要:
A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.
摘要:
A system and method create an authentication mark on a recording medium by depositing marking material on a medium in an image area to create a marking material image and to create a marking material authentication image. A predetermined amount of additional marking material is further deposited upon the medium in the authentication image area to increase an amount of marking material associated with the marking material authentication image in the authentication image area. The fixed marking material associated with the authentication image area is a tactilely perceptible authentication mark wherein the fixed marking material associated with the authentication mark has a height, with respect to a surface of the medium, that is tactilely perceptible.
摘要:
A document includes paper having an average surface roughness of at least about 0.5 microns and including one or more optical brighteners, and includes at least one image thereon wherein the at least one image includes clear binder and light absorbing material that absorbs light only at wavelengths below 350 nm. The image is substantially not detectable to a naked human eye through differential gloss or exposure to light having wavelengths of 365 nm or more, but may be revealed to the naked human eye by exposing the document to light having a wavelength at which the light absorbing material absorbs light.
摘要:
Exemplary embodiments provide materials and processes for forming organic semiconductor features by heating a liquid composition containing semiconductor particles into a Newtonian solution for a uniform deposition.
摘要:
A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
摘要:
A thin-film transistor uses a semiconducting layer comprising a semiconducting material of (A): where X, Ar, Ar′, R1, R2, R3, R4, R5, a, b, m, and n are as defined herein. The transistor has improved performance.
摘要:
A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.