公开(公告)号：US07795614B2

公开(公告)日：2010-09-14

申请号：US11695138

申请日：2007-04-02

申请人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

发明人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

IPC分类号： H01L29/10

CPC分类号： H01L51/052 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k dielectric polymer in a region of the dielectric structure closest to the semiconductor layer.

摘要翻译： 一种电子设备，包括以下任何顺序：（a）半导体层; 和（b）包含低k介电聚合物和较高k电介质聚合物的相分离电介质结构，其中所述低k电介质聚合物在所述电介质区域中比所述较高k电介质聚合物更高的浓度 最接近半导体层的结构。

公开(公告)号：US07754510B2

公开(公告)日：2010-07-13

申请号：US11695131

申请日：2007-04-02

申请人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

发明人： Yiliang Wu ,  Hadi K Mahabadi ,  Beng S Ong ,  Paul F Smith

IPC分类号： H01L21/00

CPC分类号： H01L51/052 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

摘要翻译： 一种制造电子器件的方法，包括：沉积包含半导体的层; 液体沉积包含低k电介质材料，较高k电介质材料和液体的电介质组合物，其中低k电介质材料和较高k电介质材料在液体沉积之前不相分离; 并引起下部k电介质材料和较高k电介质材料的相分离以形成相分离电介质结构，其中低k电介质材料的浓度高于 绝缘结构最靠近包含半导体的层，其中沉积包含半导体的层在液体沉积电介质组合物之前或之后引起相分离。