Invention Grant
- Patent Title: Ion source and ion implantation apparatus
- Patent Title (中): 离子源和离子注入装置
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Application No.: US12391919Application Date: 2009-02-24
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Publication No.: US07755062B2Publication Date: 2010-07-13
- Inventor: Takatoshi Yamashita , Tadashi Ikejiri
- Applicant: Takatoshi Yamashita , Tadashi Ikejiri
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Osha • Liang LLP
- Priority: JP2008-044581 20080226
- Main IPC: H01J27/02
- IPC: H01J27/02 ; H01J49/10 ; H01J49/14

Abstract:
An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.
Public/Granted literature
- US20090212232A1 ION SOURCE AND ION IMPLANTATION APPARATUS Public/Granted day:2009-08-27
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