发明授权
- 专利标题: Passivation layer for a circuit device and method of manufacture
- 专利标题(中): 电路器件的钝化层及其制造方法
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申请号: US11848820申请日: 2007-08-31
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公开(公告)号: US07767589B2公开(公告)日: 2010-08-03
- 发明人: John M. Bedinger , Michael A. Moore , Robert B. Hallock , Kamal Tabatabaie Alavi , Thomas E. Kazior
- 申请人: John M. Bedinger , Michael A. Moore , Robert B. Hallock , Kamal Tabatabaie Alavi , Thomas E. Kazior
- 申请人地址: US MA Waltham
- 专利权人: Raytheon Company
- 当前专利权人: Raytheon Company
- 当前专利权人地址: US MA Waltham
- 代理机构: Baker Botts L.L.P.
- 主分类号: H01L21/469
- IPC分类号: H01L21/469 ; H01L21/31 ; H01L23/58 ; H01L21/76
摘要:
According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter2/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 1015 ohm-centimeter, and a defect density less than 0.5/centimeter2.
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