Invention Grant
- Patent Title: Optoelectronic memory devices
- Patent Title (中): 光电存储器件
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Application No.: US11161941Application Date: 2005-08-23
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Publication No.: US07768815B2Publication Date: 2010-08-03
- Inventor: Fen Chen , Richard S. Kontra , Tom C. Lee , Theodore M. Levin , Christopher D. Muzzy , Timothy D. Sullivan
- Applicant: Fen Chen , Richard S. Kontra , Tom C. Lee , Theodore M. Levin , Christopher D. Muzzy , Timothy D. Sullivan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard M. Kotulak
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the material absorbing heat; sending an electric current through the resistive/reflective region so as to cause a reflectance change in the resistive/reflective region from a first reflectance value to a second reflectance value different from the first reflectance value; and optically reading the reflectance change in the resistive/reflective region.
Public/Granted literature
- US20070051875A1 OPTOELECTRONIC MEMORY DEVICES Public/Granted day:2007-03-08
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