Invention Grant
- Patent Title: Heat treatment apparatus
- Patent Title (中): 热处理设备
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Application No.: US11773241Application Date: 2007-07-03
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Publication No.: US07769279B2Publication Date: 2010-08-03
- Inventor: Sumi Tanaka , Takayuki Kamaishi , Kouki Suzuki
- Applicant: Sumi Tanaka , Takayuki Kamaishi , Kouki Suzuki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-207211 20030811
- Main IPC: A21B2/00
- IPC: A21B2/00

Abstract:
A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.
Public/Granted literature
- US20080011734A1 HEAT-TREATING APPARATUS Public/Granted day:2008-01-17
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