发明授权
- 专利标题： Hard mask arrangement, contact arrangement and methods of patterning a substrate and manufacturing a contact arrangement
- 专利标题（中）： 硬掩模布置，接触布置以及图案化基板和制造接触布置的方法
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申请号： US11583145申请日： 2006-10-19
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公开(公告)号： US07772126B2公开(公告)日： 2010-08-10
- 发明人: Lars Bach
- 申请人： Lars Bach
- 申请人地址： DE Munich
- 专利权人： Qimonda AG
- 当前专利权人： Qimonda AG
- 当前专利权人地址： DE Munich
- 代理机构： Edell, Shapiro & Finnan, LLC
- 主分类号： H01L21/467
- IPC分类号： H01L21/467
摘要：
An interlayer is disposed on a pattern surface of a substrate. A buried hard mask may be provided on the interlayer. The buried hard mask includes a template opening having a template length along a line axis and a template width perpendicular thereto. The buried hard mask is filled with a fill material. A top mask is provided above the filled buried hard mask. The top mask includes a trim opening crossing the template opening and having a trim width along the line axis that is smaller than the template length. By etching the fill material and the interlayer using the top and buried hard mask a process section of the pattern surface may be exposed such that a target length and width of the process section result from the template and the trim widths. The planar dimensions of the process section may be decoupled from each other.
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