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发明授权
US07778079B2 Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices 有权
具有后编程操作电阻漂移饱和的多电平单元相变存储器件，采用这种器件的存储器系统以及读取存储器件的方法

Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices
摘要：
In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.
摘要（中）：

在存储器件和其编程方法中，存储器件包括：多个存储器单元，每个存储器单元包括电阻可变材料，该电阻可变材料具有响应于在一个应用编程电流中确定的初始电阻 编程操作; 以及修改电路，其在存储单元的编程操作之后修改存储单元的电阻，以通过在饱和运算中施加饱和电流来将存储单元的电阻从初始电阻改变为第二电阻。 每个存储单元连接到存储器件的导线，该导线用于施加编程电流以对编程操作中对应的存储单元的电阻进行编程，用于将饱和电流施加到相应的存储单元中 饱和操作，并且用于在随后的读取操作中应用读取电流来读取相应存储器单元的电阻。

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