发明授权
- 专利标题: CMOS imager array with recessed dielectric
- 专利标题(中): 具有凹陷电介质的CMOS成像器阵列
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申请号: US11560882申请日: 2006-11-17
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公开(公告)号: US07781781B2公开(公告)日: 2010-08-24
- 发明人: James W. Adkisson , Jeffrey P. Gambino , Zhong-Xiang He , Mark D. Jaffe , Robert K. Leidy , Stephen E. Luce , Richard J. Rassel , Edmund J. Sprogis
- 申请人: James W. Adkisson , Jeffrey P. Gambino , Zhong-Xiang He , Mark D. Jaffe , Robert K. Leidy , Stephen E. Luce , Richard J. Rassel , Edmund J. Sprogis
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Richard M. Kotulak, Esq.
- 主分类号: H01L27/15
- IPC分类号: H01L27/15
摘要:
A CMOS image sensor array and method of fabrication. The CMOS imager sensor array comprises a substrate; an array of light receiving pixel structures formed above the substrate, the array having formed therein “m” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer; a dense logic wiring region formed adjacent to the array of light receiving pixel structures having “n” levels of conductive structures, each level formed in a corresponding interlevel dielectric material layer, where n>m. A microlens array having microlenses and color filters formed above the interlevel dielectric material layer, a microlens and respective color filter in alignment with a respective light receiving structure formed at a surface of the substrate. A top surface of the interlevel dielectric material layer beneath the microlens array is recessed from a top surface of the interlevel dielectric material layers of the dense logic wiring region.
公开/授权文献
- US20080116537A1 CMOS IMAGER ARRAY WITH RECESSED DIELECTRIC 公开/授权日:2008-05-22
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