发明授权
- 专利标题： Electrical device and method for fabricating the same
- 专利标题（中）： 电气装置及其制造方法
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申请号： US12211815申请日： 2008-09-17
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公开(公告)号： US07795090B2公开(公告)日： 2010-09-14
- 发明人: Shian-Jyh Lin , Chien-Li Cheng , Pei-Ing Lee , Chung-Yuan Lee
- 申请人： Shian-Jyh Lin , Chien-Li Cheng , Pei-Ing Lee , Chung-Yuan Lee
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu
- 优先权： TW95101275A 20060112
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.
公开/授权文献
- US20090011569A1 ELECTRICAL DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2009-01-08
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