Invention Grant
US07800944B2 Nonvolatile semiconductor memory device and programming method thereof
有权
非易失性半导体存储器件及其编程方法
- Patent Title: Nonvolatile semiconductor memory device and programming method thereof
- Patent Title (中): 非易失性半导体存储器件及其编程方法
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Application No.: US12129820Application Date: 2008-05-30
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Publication No.: US07800944B2Publication Date: 2010-09-21
- Inventor: Jin-Young Chun , Jae-Yong Jeong , Chi-Weon Yoon
- Applicant: Jin-Young Chun , Jae-Yong Jeong , Chi-Weon Yoon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: KR10-2007-0064556 20070628
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Disclosed is a nonvolatile memory device and programming method of a nonvolatile memory device. The programming method of the nonvolatile memory device includes conducting a first programming operation for a memory cell, retrieving original data from the memory cell after the first programming operation, and conducting a second programming operation with reference to the original data and a second verifying voltage higher than a first verifying voltage of the first programming operation.
Public/Granted literature
- US20090003056A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD THEREOF Public/Granted day:2009-01-01
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