发明授权
- 专利标题： Method for fabricating a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11964516申请日： 2007-12-26
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公开(公告)号： US07803701B2公开(公告)日： 2010-09-28
- 发明人: Shian-Jyh Lin , Shun-Fu Chen , Tse-Chuan Kuo , An-Hsiung Liu
- 申请人： Shian-Jyh Lin , Shun-Fu Chen , Tse-Chuan Kuo , An-Hsiung Liu
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 优先权： TW96134019A 20070912
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/425
摘要：
A method for fabricating the semiconductor device comprises providing a semiconductor substrate having a device region and a testkey region. A first trench is formed in the device region and a second trench is formed in the testkey region. A conductive layer with a first etching selectivity is formed in the first and second trenches. A first implantation process is performed in a first direction to form a first doped region with a first impurity and an undoped region in the conductive layer simultaneously and respectively in the device region and in the testkey region. A second implantation process is performed in the second trench to form a second doped region with a second impurity in the conductive layer, wherein the conductive layer in the second trench has a second etching selectivity higher than the first etching selectivity.
公开/授权文献
- US20090068813A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 公开/授权日：2009-03-12
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