发明授权
- 专利标题： Method of fabricating a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12611088申请日： 2009-11-02
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公开(公告)号： US07807585B2公开(公告)日： 2010-10-05
- 发明人: Takuya Seino , Manabu Ikemoto , Hiroki Date
- 申请人： Takuya Seino , Manabu Ikemoto , Hiroki Date
- 申请人地址： JP Kawasaki-shi
- 专利权人： Canon Anelva Corporation
- 当前专利权人： Canon Anelva Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; C23C16/00
摘要：
A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.
公开/授权文献
- US20100075508A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 公开/授权日：2010-03-25
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