公开(公告)号：US20120258582A1

公开(公告)日：2012-10-11

申请号：US13478854

申请日：2012-05-23

申请人： Takuya SEINO ,  Junko ONO ,  Kimiko MASHIMO ,  Hiroki DATE

发明人： Takuya SEINO ,  Junko ONO ,  Kimiko MASHIMO ,  Hiroki DATE

IPC分类号： H01L21/20

CPC分类号： H01L21/823807 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0475 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/66068 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： In one embodiment of the present invention, the processing surface of a substrate having at least a single crystal surface and a dielectric surface is exposed to a first deposition gas containing a source gas and a doping gas to form a first doped thin film on the single crystal surface, whereas supply of the first deposition gas is stopped before a film is formed on the dielectric surface. Next, the processing surface of the substrate is exposed to a second deposition gas containing a source gas and a doping gas to form a second thin film doped with less dopant than the first thin film on the single crystal surface, whereas supply of the second deposition gas is stopped before a film is formed on the dielectric surface. Subsequently, the processing surface of the substrate is exposed to a chlorine-containing gas to be etched.

摘要翻译： 在本发明的一个实施例中，至少具有单晶表面和电介质表面的衬底的处理表面暴露于含有源气体和掺杂气体的第一沉积气体，以在单个晶体表面上形成第一掺杂薄膜 而在电介质表面上形成膜之前停止第一沉积气体的供给。 接下来，将衬底的处理表面暴露于含有源气体和掺杂气体的第二沉积气体，以形成在单晶表面上掺杂比第一薄膜更少的掺杂剂的第二薄膜，而提供第二沉积 在电介质表面上形成膜之前停止气体。 随后，将基板的处理表面暴露于待蚀刻的含氯气体中。

公开(公告)号：US07807585B2

公开(公告)日：2010-10-05

申请号：US12611088

申请日：2009-11-02

申请人： Takuya Seino ,  Manabu Ikemoto ,  Hiroki Date

发明人： Takuya Seino ,  Manabu Ikemoto ,  Hiroki Date

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/28229 ,  C23C14/02 ,  C23C14/165 ,  C23C14/5853 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/31645 ,  H01L29/517 ,  Y10S438/906

摘要： A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering Hf or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.

摘要翻译： 通过以下步骤形成包括HfO等的介电绝缘膜：通过将衬底表面暴露于氟基来清洁半导体衬底的表面; 用氟基或氢化物（SiH 4等）进行氢终止处理; 溅射Hf等; 然后进行氧化/氮化。 这些步骤在不将基板暴露于大气的情况下进行，从而可以获得具有较小滞后的C-V曲线，并实现具有良好的器件特性的MOS-FET。

公开(公告)号：US07919397B2

公开(公告)日：2011-04-05

申请号：US12683183

申请日：2010-01-06

申请人： Junko Nakatsuru ,  Hiroki Date

发明人： Junko Nakatsuru ,  Hiroki Date

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/306 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/76251 ,  H01L21/84

摘要： The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer that is the outermost surface of the SOI substrate and is in an exposed state, and can prevent the agglomeration further without forming a protective film on the SOI substrate. The method for reducing the agglomeration of the Si layer in the SOI substrate is a method of supplying a hydride gas in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer which is in an exposed state in the SOI substrate that has an insulation layer and the Si layer sequentially stacked on a Si substrate. In this method, the hydride gas dissociates before the Si layer coheres, at a temperature at which the Si layer does not yet start agglomeration, and terminates a dangling bond of the Si layer with a predetermined atom such as H.

摘要翻译： 本发明提供一种降低SOI衬底中的Si层的聚集的方法，其可以防止在Si层的加热和升温过程中Si层的凝聚，当加热和升温时 Si层，并且处于暴露状态，并且可以防止在SOI衬底上形成保护膜而进一步聚集。 减少SOI衬底中Si层的聚集的方法是在Si层的加热和升温过程中，当加热和升温处于暴露状态的Si层时，提供氢化物气体的方法 在具有绝缘层并且Si层依次堆叠在Si衬底上的SOI衬底中。 在该方法中，Si层在Si层尚未开始结块的温度下在Si层之间分离，并终止Si层与预定原子如H的悬挂键。

公开(公告)号：US20100144127A1

公开(公告)日：2010-06-10

申请号：US12683183

申请日：2010-01-06

申请人： Junko Nakatsuru ,  Hiroki Date

发明人： Junko Nakatsuru ,  Hiroki Date

IPC分类号： H01L21/20

CPC分类号： H01L21/306 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/76251 ,  H01L21/84

摘要： The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer that is the outermost surface of the SOI substrate and is in an exposed state, and can prevent the agglomeration further without forming a protective film on the SOI substrate. The method for reducing the agglomeration of the Si layer in the SOI substrate is a method of supplying a hydride gas in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer which is in an exposed state in the SOI substrate that has an insulation layer and the Si layer sequentially stacked on a Si substrate. In this method, the hydride gas dissociates before the Si layer coheres, at a temperature at which the Si layer does not yet start agglomeration, and terminates a dangling bond of the Si layer with a predetermined atom such as H.

摘要翻译： 本发明提供一种降低SOI衬底中的Si层的聚集的方法，其可以防止在Si层的加热和升温过程中Si层的凝聚，当加热和升温时 Si层，并且处于暴露状态，并且可以防止在SOI衬底上形成保护膜而进一步聚集。 减少SOI衬底中Si层的聚集的方法是在Si层的加热和升温过程中，当加热和升温处于暴露状态的Si层时，提供氢化物气体的方法 在具有绝缘层并且Si层依次堆叠在Si衬底上的SOI衬底中。 在该方法中，Si层在Si层尚未开始结块的温度下在Si层之间分离，并终止Si层与预定原子如H的悬挂键。

公开(公告)号：US20100075508A1

公开(公告)日：2010-03-25

申请号：US12611088

申请日：2009-11-02

申请人： Takuya Seino ,  Manabu Ikemoto ,  Hiroki Date

发明人： Takuya Seino ,  Manabu Ikemoto ,  Hiroki Date

IPC分类号： H01L21/31 ,  H01L21/3065 ,  C23C16/513

CPC分类号： H01L21/28229 ,  C23C14/02 ,  C23C14/165 ,  C23C14/5853 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/31645 ,  H01L29/517 ,  Y10S438/906

摘要： A dielectric insulating film including HfO or the like is formed by: cleaning a surface of a semiconductor substrate by exposing the substrate surface to a fluorine radical; performing hydrogen termination processing with a fluorine radical or a hydride (SiH4 or the like); sputtering HE or the like; and then performing oxidation/nitridation. These steps are carried out without exposing the substrate to atmosphere, thereby making it possible to obtain a C-V curve with less hysteresis and realize a MOS-FET having favorable device characteristics.

摘要翻译： 通过以下步骤形成包括HfO等的介电绝缘膜：通过将衬底表面暴露于氟基来清洁半导体衬底的表面; 用氟基或氢化物（SiH 4等）进行氢终止处理; 溅射HE等; 然后进行氧化/氮化。 这些步骤在不将基板暴露于大气的情况下进行，从而可以获得具有较小滞后的C-V曲线，并实现具有良好的器件特性的MOS-FET。

公开(公告)号：US20080014363A1

公开(公告)日：2008-01-17

申请号：US11779169

申请日：2007-07-17

申请人： Yasumi SAGO ,  Masayoshi IKEDA ,  Kazuaki KANEKO ,  Hiroki DATE

发明人： Yasumi SAGO ,  Masayoshi IKEDA ,  Kazuaki KANEKO ,  Hiroki DATE

IPC分类号： H05C1/00

CPC分类号： H01L21/6831 ,  C23C16/4586 ,  H01J2237/2001

摘要： This invention presents an ESC mechanism for chucking an object electro-statically on a chucking surface, comprising a stage having a dielectric block of which surface is the chucking surface, and a chucking electrode provided in the dielectric block. A temperature controller is provided with the stage for controlling temperature of the object. A chucking power source to apply voltage to the chucking electrode is provided so that the object is chucked. The chucking surface has concaves of which openings are shut by the chucked object. A heat-exchange gas introduction system that introduces heat-exchange gas into the concaves is provided. The concaves include a heat-exchange concave for promoting heat-exchange between the stage and the object under increased pressure, and a gas-diffusion concave for making the introduced gas diffuse to the heat-exchange concave. The gas-diffusion concave is deeper than the heat-exchange concave. This invention also presents a surface processing apparatus, comprising a process chamber in which a surface of an object is processed, and the electro-static chucking mechanism of the same composition.

摘要翻译： 本发明提供一种用于将电子静电夹持在夹持表面上的ESC机构，包括具有表面为夹持表面的介质块的台和设置在该介质块中的夹持电极。 温度控制器设置有用于控制物体的温度的台。 提供用于向夹持电极施加电压的夹持电源，以便夹持该物体。 卡盘表面具有通过夹持物体关闭开口的凹陷。 提供了将热交换气体引入凹部的热交换气体导入系统。 凹部包括用于在增压下促进台与物体之间的热交换的热交换凹部，以及用于使引入的气体扩散到热交换凹部的气体扩散凹部。 气体扩散凹部比热交换凹部深。 本发明还提供了一种表面处理装置，其包括处理物体的表面的处理室和相同组成的静电夹持机构。