Invention Grant
US07816284B2 Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
有权
在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
- Patent Title: Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting device
- Patent Title (中): 在III族氮化物半导体衬底上形成图案的方法和制造III族氮化物半导体发光器件的方法
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Application No.: US12429458Application Date: 2009-04-24
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Publication No.: US07816284B2Publication Date: 2010-10-19
- Inventor: Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- Applicant: Jong In Yang , Yu Seung Kim , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0101586 20081016
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
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