发明授权
US07820523B2 Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
有权
将不同性质的有源区域直接制造到绝缘体上：应用于单栅极或双栅极MOS晶体管
- 专利标题： Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
- 专利标题（中）： 将不同性质的有源区域直接制造到绝缘体上：应用于单栅极或双栅极MOS晶体管
-
申请号： US11579037申请日： 2004-06-25
-
公开(公告)号： US07820523B2公开(公告)日： 2010-10-26
- 发明人: François Andrieu , Thomas Ernst , Simon Deleonibus
- 申请人： François Andrieu , Thomas Ernst , Simon Deleonibus
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'Energie Atomique
- 当前专利权人： Commissariat a l'Energie Atomique
- 当前专利权人地址： FR Paris
- 代理机构： McKenna Long & Aldridge LLP
- 优先权： FR0450889 20040507
- 国际申请： PCT/EP2004/051255 WO 20040625
- 国际公布： WO2005/109509 WO 20051117
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.
公开/授权文献
信息查询
IPC分类:
