Invention Grant
- Patent Title: Boosting seed voltage for a memory device
- Patent Title (中): 提升存储器件的种子电压
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Application No.: US12262410Application Date: 2008-10-31
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Publication No.: US07835187B2Publication Date: 2010-11-16
- Inventor: Satoru Tamada , Neal R Mielke , Krishna Parat
- Applicant: Satoru Tamada , Neal R Mielke , Krishna Parat
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Cool Patent, P.C.
- Agent Joseph P. Curtin
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method and device using bitline-bitline capacitance between adjacent bitlines to boost seed voltage in a memory device are provided. The method may include a precharge phase, a boost phase, an equalize phase, and a lock in phase. In one embodiment, the method may include boosting the seed voltage twice. The bitlines may be divided into one or more segments.
Public/Granted literature
- US20100110795A1 BOOSTING SEED VOLTAGE FOR A MEMORY DEVICE Public/Granted day:2010-05-06
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