发明授权
- 专利标题： Isolation trench with rounded corners for BiCMOS process
- 专利标题（中）： 用于BiCMOS工艺的带圆角的隔离槽
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申请号： US11873205申请日： 2007-10-16
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公开(公告)号： US07846789B2公开(公告)日： 2010-12-07
- 发明人: Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
- 申请人： Sameer P. Pendharkar , John Lin , Philip L. Hower , Steven L. Merchant
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor device comprising a first transistor device on or in a semiconductor substrate and a second transistor device on or in the substrate. The device further comprises an insulating trench located between the first transistor device and the second transistor device. At least one upper corner of the insulating trench is a rounded corner in a lateral plane of the substrate.
公开/授权文献
- US20090096033A1 ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS 公开/授权日：2009-04-16
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