发明授权
- 专利标题： Semiconductor device and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US12368538申请日： 2009-02-10
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公开(公告)号： US07847343B2公开(公告)日： 2010-12-07
- 发明人: Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
- 申请人： Digh Hisamoto , Kan Yasui , Shinichiro Kimura , Tetsuya Ishimaru
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2004-221764 20040729
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
Provided is a nonvolatile semiconductor memory device having a split gate structure, wherein a memory gate is formed over a convex shaped substrate and side surfaces of it is used as a channel. The nonvolatile semiconductor memory device according to the present invention is excellent in read current driving power even if a memory cell is scaled down.
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