Invention Grant
- Patent Title: Low temperature conformal oxide formation and applications
- Patent Title (中): 低温保形氧化物的形成和应用
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Application No.: US12241826Application Date: 2008-09-30
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Publication No.: US07851385B2Publication Date: 2010-12-14
- Inventor: Matthew Spuller , Melody Agustin , Meiyee (Maggie Le) Shek , Li-Qun Xia , Reza Arghavani
- Applicant: Matthew Spuller , Melody Agustin , Meiyee (Maggie Le) Shek , Li-Qun Xia , Reza Arghavani
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; C23C16/40 ; C23C16/00
Abstract:
The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.
Public/Granted literature
- US20090087977A1 LOW TEMPERATURE CONFORMAL OXIDE FORMATION AND APPLICATIONS Public/Granted day:2009-04-02
Information query
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