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公开(公告)号：US07851385B2
公开(公告)日：2010-12-14
申请号：US12241826
申请日：2008-09-30
Applicant: Matthew Spuller , Melody Agustin , Meiyee (Maggie Le) Shek , Li-Qun Xia , Reza Arghavani
Inventor： Matthew Spuller , Melody Agustin , Meiyee (Maggie Le) Shek , Li-Qun Xia , Reza Arghavani
IPC: H01L21/31 , H01L21/469 , C23C16/40 , C23C16/00
CPC classification number: H01L21/31608 , C23C16/0272 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L27/11519 , H01L27/11521 , H01L29/66545 , H01L29/6656 , H01L29/7833
Abstract: The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.
Abstract translation: 本发明总体上提供了用于处理半导体衬底的装置和方法。 特别地，本发明的实施例涉及一种用于形成半导体器件的方法和装置，其具有在低温下形成的共形氧化硅层。 本发明的一个实施例提供一种形成半导体栅极结构的方法。 该方法包括在半导体衬底上形成栅堆叠，在半导体衬底上使用低温循环法形成共形氧化硅层，并在保形氧化硅层上形成间隔层。
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公开(公告)号：US07776516B2
公开(公告)日：2010-08-17
申请号：US11488528
申请日：2006-07-18
Applicant: Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
Inventor： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
IPC: G03F7/26
CPC classification number: G03F7/091 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
Abstract translation: 提供了使用渐变抗反射涂层形成装置的方法。 在基板上形成一个或多个非晶碳层。 在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。 在ARC层上形成能量敏感的抗蚀剂材料。 通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。 开发了引入能量敏感抗蚀剂材料层的图案的图像。
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公开(公告)号：US20100239979A1
公开(公告)日：2010-09-23
申请号：US12797406
申请日：2010-06-09
Applicant: Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
Inventor： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
CPC classification number: G03F7/091 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
Abstract translation: 提供了使用渐变抗反射涂层形成装置的方法。 在基板上形成一个或多个非晶碳层。 在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。 在ARC层上形成能量敏感的抗蚀剂材料。 通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。 开发了引入能量敏感抗蚀剂材料层的图案的图像。
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Patent Agency Ranking
公开(公告)号：US08125034B2
公开(公告)日：2012-02-28
申请号：US12797406
申请日：2010-06-09
Applicant: Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
Inventor： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
IPC: H01L23/48
CPC classification number: G03F7/091 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
Abstract translation: 提供了使用渐变抗反射涂层形成装置的方法。 在基板上形成一个或多个非晶碳层。 在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。 在ARC层上形成能量敏感的抗蚀剂材料。 通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。 开发了引入能量敏感抗蚀剂材料层的图案的图像。
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公开(公告)号：US20090087977A1
公开(公告)日：2009-04-02
申请号：US12241826
申请日：2008-09-30
Applicant: MATTHEW SPULLER , Melody Agustin , Meiyee (Maggie Le) Shek , Li-Qun Xia , Reza Arghavani
Inventor： MATTHEW SPULLER , Melody Agustin , Meiyee (Maggie Le) Shek , Li-Qun Xia , Reza Arghavani
IPC: H01L21/3205
CPC classification number: H01L21/31608 , C23C16/0272 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L27/11519 , H01L27/11521 , H01L29/66545 , H01L29/6656 , H01L29/7833
Abstract: The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.
Abstract translation: 本发明总体上提供了用于处理半导体衬底的装置和方法。 特别地，本发明的实施例涉及一种用于形成半导体器件的方法和装置，其具有在低温下形成的共形氧化硅层。 本发明的一个实施例提供一种形成半导体栅极结构的方法。 该方法包括在半导体衬底上形成栅叠层，在半导体衬底上使用低温循环法形成共形氧化硅层，并在保形氧化硅层上形成间隔层。
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6.发明申请PLASMA-INDUCED CHARGE DAMAGE CONTROL FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES 审中-公开用于等离子体增强化学蒸气沉积过程的等离子体诱导电荷损失控制公开(公告)号：US20080254233A1
公开(公告)日：2008-10-16
申请号：US11733531
申请日：2007-04-10
Applicant: KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
Inventor： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
IPC: C23C14/28
Abstract: Methods of depositing amorphous carbon films on substrates are provided herein. The methods reduce or prevent plasma-induced charge damage to the substrates from the deposition of the amorphous carbon films. In one aspect, an initiation layer of amorphous carbon is deposited at a low RF power level and/or at a low hydrocarbon compound/inert gas flow rate ratio before a bulk layer of amorphous carbon is deposited. After the deposition of the initiation layer, the RF power, hydrocarbon flow rate, and inert gas flow rate may be ramped to final values for the deposition of the bulk layer, wherein the RF power ramp rate is typically greater than the ramp rates of the hydrocarbon compound and of the inert gas. In another aspect, a method of minimizing plasma-induced charge damage includes depositing a seasoning layer on one or more interior surfaces of a chamber before the deposition of the amorphous carbon film on a substrate therein or coating the interior surfaces with an oxide or dielectric layer during manufacturing.
Abstract translation: 本文提供了在基片上沉积非晶碳膜的方法。 该方法从无定形碳膜的沉积中减少或防止等离子体对基板的电荷损伤。 在一个方面，在堆积无定形碳沉积层之前，以低RF功率水平和/或低烃化合物/惰性气体流速比沉积无定形碳的起始层。 在起始层的沉积之后，RF功率，烃流速和惰性气体流速可以斜坡化到用于沉积体层的最终值，其中RF功率斜坡率通常大于 烃化合物和惰性气体。 在另一方面，一种使等离子体感应的电荷损伤最小化的方法包括在将非晶碳膜沉积在基底上之前，在腔室的一个或多个内表面上沉积调味层，或者用氧化物或介电层涂覆内表面 在制造过程中。
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公开(公告)号：US20080008842A1
公开(公告)日：2008-01-10
申请号：US11483951
申请日：2006-07-07
Applicant: Jyr Hong Soo , Matthew Spuller , Michael S. Cox , Martin Jay Seamons , Amir Al-Bayati , Bok Hoen Kim , Hichem M'Saad
Inventor： Jyr Hong Soo , Matthew Spuller , Michael S. Cox , Martin Jay Seamons , Amir Al-Bayati , Bok Hoen Kim , Hichem M'Saad
IPC: H05H1/24
CPC classification number: H01J37/32165 , H01J37/32091 , H01J37/32935
Abstract: Methods for reducing plasma instability for plasma depositing a dielectric layer are provided. In one embodiment, the method includes providing a substrate in a plasma processing chamber, flowing a gas mixture into the chamber, applying an RF power to an electrode to form a plasma in the chamber, and collecting DC bias information. In another embodiment, the method for plasma processing includes obtaining of DC bias information over a plurality of plasma generation events, and determining an RF power application parameter from the DC bias information.
Abstract translation: 提供了用于降低等离子体沉积介电层的等离子体不稳定性的方法。 在一个实施例中，该方法包括在等离子体处理室中提供衬底，将气体混合物流入室中，向电极施加RF功率以在腔室中形成等离子体，并收集DC偏置信息。 在另一个实施例中，等离子体处理的方法包括在多个等离子体产生事件中获得DC偏置信息，以及从DC偏置信息确定RF功率应用参数。
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公开(公告)号：US20080020319A1
公开(公告)日：2008-01-24
申请号：US11488528
申请日：2006-07-18
Applicant: Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
Inventor： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
IPC: G03C1/00
CPC classification number: G03F7/091 , H01L2924/0002 , H01L2924/00
Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
Abstract translation: 提供了使用渐变抗反射涂层形成装置的方法。 在基板上形成一个或多个非晶碳层。 在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。 在ARC层上形成能量敏感的抗蚀剂材料。 通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。 开发了引入能量敏感抗蚀剂材料层的图案的图像。
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