发明授权
- 专利标题: Non-volatile memory and semiconductor device
- 专利标题(中): 非易失性存储器和半导体器件
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申请号: US12407539申请日: 2009-03-19
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公开(公告)号: US07855919B2公开(公告)日: 2010-12-21
- 发明人: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- 申请人: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- 申请人地址: JP
- 专利权人: Semiconductor Energy laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP Welsh Katz
- 优先权: JP2000-314369 20001013
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS. 1A and 1B are views of a circuit structure for controlling the writing. In FIGS. 1A and 1B, an output of an operational amplifier 103 is connected to a control gate of a memory transistor 101, a constant current source 102 is connected to a drain electrode, and a source electrode is grounded. The constant current source 102 and a voltage Vpgm are respectively connected to two input terminals of the operational amplifier 103.
公开/授权文献
- US20090180326A1 Non-Volatile Memory and Semiconductor Device 公开/授权日:2009-07-16