发明授权
US07863201B2 Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance
有权
形成具有低接触电阻的硅化源极/漏极触点的场效应晶体管的方法
- 专利标题: Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance
- 专利标题(中): 形成具有低接触电阻的硅化源极/漏极触点的场效应晶体管的方法
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申请号: US12402816申请日: 2009-03-12
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公开(公告)号: US07863201B2公开(公告)日: 2011-01-04
- 发明人: Yong-Kuk Jeong , Bong-Seok Suh , Dong-Hee Yu , Oh-Jung Kwon , Seong-Dong Kim , O Sung Kwon
- 申请人: Yong-Kuk Jeong , Bong-Seok Suh , Dong-Hee Yu , Oh-Jung Kwon , Seong-Dong Kim , O Sung Kwon
- 申请人地址: KR US NY Armonk US CA Milpitas DE Neubiberg
- 专利权人: Samsung Electronics Co., Ltd.,International Business Machines Corporation,Infineon Technologies North America Corp.,Infineon Technologies AG
- 当前专利权人: Samsung Electronics Co., Ltd.,International Business Machines Corporation,Infineon Technologies North America Corp.,Infineon Technologies AG
- 当前专利权人地址: KR US NY Armonk US CA Milpitas DE Neubiberg
- 代理机构: Myers Bigel Sibley & Sajovec
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/469 ; H01L21/00
摘要:
Methods of forming integrated circuit devices according to embodiments of the present invention include forming a PMOS transistor having P-type source and drain regions, in a semiconductor substrate, and then forming a diffusion barrier layer on the source and drain regions. A silicon nitride layer is deposited on at least portions of the diffusion barrier layer that extend opposite the source and drain regions. Hydrogen is removed from the deposited silicon nitride layer by exposing the silicon nitride layer to ultraviolet (UV) radiation. This removal of hydrogen may operate to increase a tensile stress in a channel region of the field effect transistor. This UV radiation step may be followed by patterning the first and second silicon nitride layers to expose the source and drain regions and then forming silicide contact layers directly on the exposed source and drain regions.