公开(公告)号：US20160172361A1

公开(公告)日：2016-06-16

申请号：US15049792

申请日：2016-02-22

申请人： Hwa-Sung Rhee ,  Seung-Chul LEE ,  Chul-Wan AN ,  Henry K. UTOMO ,  Seong-Dong KIM

发明人： Hwa-Sung Rhee ,  Seung-Chul LEE ,  Chul-Wan AN ,  Henry K. UTOMO ,  Seong-Dong KIM

IPC分类号： H01L27/092 ,  H01L29/417 ,  H01L29/45 ,  H01L29/06 ,  H01L29/165 ,  H01L29/78

CPC分类号： H01L27/092 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848

摘要： Methods of forming field effect transistors include selectively etching source and drain region trenches into a semiconductor region using a gate electrode as an etching mask. An epitaxial growth process is performed to fill the source and drain region trenches. Silicon germanium (SiGe) source and drain regions may be formed using an epitaxial growth process. During this growth process the bottoms and sidewalls of the trenches may be used as “seeds” for the silicon germanium growth. An epitaxial growth step may then be performed to define silicon capping layers on the SiGe source and drain regions.

摘要翻译： 形成场效应晶体管的方法包括使用栅电极作为蚀刻掩模来选择性地将源极和漏极区沟槽刻蚀成半导体区域。 执行外延生长工艺以填充源极和漏极区沟槽。 可以使用外延生长工艺来形成硅锗（SiGe）源极和漏极区。 在该生长过程中，沟槽的底部和侧壁可以用作硅锗生长的“种子”。 然后可以执行外延生长步骤以在SiGe源极和漏极区上限定硅覆盖层。

公开(公告)号：US20110180852A1

公开(公告)日：2011-07-28

申请号：US13078476

申请日：2011-04-01

申请人： Seong-Dong Kim ,  Zhijiong Luo ,  Huilong Zhu

发明人： Seong-Dong Kim ,  Zhijiong Luo ,  Huilong Zhu

IPC分类号： H01L29/772

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L29/165 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7848

摘要： A semiconductor device includes a buried insulator layer formed on a bulk substrate; a first type semiconductor material formed on the buried insulator layer, and corresponding to a body region of a field effect transistor (FET); a second type of semiconductor material formed over the buried insulator layer, adjacent opposing sides of the body region, and corresponding to source and drain regions of the FET; the second type of semiconductor material having a different bandgap than the first type of semiconductor material; wherein a source side p/n junction of the FET is located substantially within whichever of the first and the second type of semiconductor material having a lower bandgap, and a drain side p/n junction of the FET is located substantially entirely within whichever of the first and the second type of semiconductor material having a higher bandgap.

摘要翻译： 半导体器件包括形成在本体衬底上的掩埋绝缘体层; 形成在所述掩埋绝缘体层上并对应于场效应晶体管（FET）的体区的第一类型半导体材料; 形成在所述掩埋绝缘体层上，邻近所述本体区域的相对侧并且对应于所述FET的源极和漏极区域的第二类型的半导体材料; 所述第二类型的半导体材料具有与所述第一类型的半导体材料不同的带隙; 其中FET的源极p / n结基本上位于具有较低带隙的第一和第二类型的半导体材料中的任何一个中，并且FET的漏极侧p / n结基本上完全位于 第一和第二类型的具有较高带隙的半导体材料。

公开(公告)号：US07885251B2

公开(公告)日：2011-02-08

申请号：US11316712

申请日：2005-12-27

申请人： Jae-Ho Kim ,  Sang-Shin Lee ,  Il-Yeup Ahn ,  Kwang-Ho Won ,  Seong-Dong Kim

发明人： Jae-Ho Kim ,  Sang-Shin Lee ,  Il-Yeup Ahn ,  Kwang-Ho Won ,  Seong-Dong Kim

IPC分类号： H04J3/06

CPC分类号： B61L27/0088 ,  H04J3/0652 ,  H04J3/0655 ,  H04W56/00 ,  Y02D70/142

摘要： A network configuration method of a sensor network configured to collect sensed data from a plurality of sensor nodes comprising: arranging linearly a path of respective node so as to enable all sensor nodes except for a sink node and a terminal node to have respectively a predecessor and a successor; and setting the time synchronization of whole network by fixing the each node take its own time synchronization on the basis of an operation section of the predecessor.

摘要翻译： 传感器网络的网络配置方法，其被配置为从多个传感器节点收集感测数据，包括：线性地布置各个节点的路径，以便能够使得除了节点和终端节点之外的所有传感器节点分别具有前导和 继任者 并且通过固定每个节点在前一个操作部分的基础上进行自己的时间同步来设置整个网络的时间同步。

公开(公告)号：US07796958B2

公开(公告)日：2010-09-14

申请号：US11847763

申请日：2007-08-30

申请人： Hae-Moon Seo ,  Yeon-Kuk Moon ,  Young-Kuk Park ,  Kwang-Ho Won ,  Seong-Dong Kim

发明人： Hae-Moon Seo ,  Yeon-Kuk Moon ,  Young-Kuk Park ,  Kwang-Ho Won ,  Seong-Dong Kim

IPC分类号： H04B1/02 ,  H04B1/04 ,  H04L27/00

CPC分类号： H04B1/0483

摘要： A transmitter and a transmitting method of a wireless communication system are provided. The transmitter transmits RF signals using an outphasing scheme of converting one analog IF NC-EMS into two analog C-EMSs. In the transmitter, a baseband processor generates a baseband digital modulated I-signal and a baseband digital modulated Q-signal. A signal converter converts the baseband digital modulated I-signal and the baseband digital modulated Q-signal into a baseband analog modulated I-signal and a baseband analog modulated Q-signal. An IF processor up-converts the baseband analog modulated I-signal and the baseband analog modulated Q-signal to generate one analog IF NC-EMS. A signal component separator separates the analog IF NC-EMS into a first analog IF C-EMS and a second analog IF C-EMS. An RF processor up-converts the first analog IF C-EMS and the second analog IF C-EMS to generate a first analog RF C-EMS and a second analog RF C-EMS. A power amplifier amplifies powers of the first and second analog RF C-EMSs. An RF combiner combines the first and second analog RF C-EMSs having the amplified powers to generate one combined analog RF C-EMS.

摘要翻译： 提供了一种无线通信系统的发射机和发射方法。 发射机使用将一个模拟IF NC-EMS转换成两个模拟C-EMS的外部方案来发射RF信号。 在发射机中，基带处理器产生基带数字调制I信号和基带数字调制Q信号。 信号转换器将基带数字调制I信号和基带数字调制Q信号转换成基带模拟调制I信号和基带模拟调制Q信号。 IF处理器对基带模拟调制信号和基带模拟调制Q信号进行升压转换，以生成一个模拟IF NC-EMS。 信号分量分离器将模拟IF NC-EMS分为第一模拟IF C-EMS和第二模拟IF C-EMS。 RF处理器将第一个模拟IF C-EMS和第二个模拟IF C-EMS升级转换，生成第一个模拟RF C-EMS和第二个模拟RF C-EMS。 功率放大器放大第一和第二模拟RF C-EMS的功率。 RF组合器组合具有放大功率的第一和第二模拟RF C-EMS以产生一个组合的模拟RF C-EMS。

公开(公告)号：US20090054014A1

公开(公告)日：2009-02-26

申请号：US11847795

申请日：2007-08-30

申请人： Hae-Moon SEO ,  Yeon-Kuk Moon ,  Young-Kuk Park ,  Kwang-Ho Won ,  Seong-Dong Kim

发明人： Hae-Moon SEO ,  Yeon-Kuk Moon ,  Young-Kuk Park ,  Kwang-Ho Won ,  Seong-Dong Kim

IPC分类号： H03C7/02

CPC分类号： H04B1/0483 ,  H03F1/02 ,  H03F3/24 ,  H04B2001/045

摘要： A transmitter and a transmitting method of a wireless communication system are provided. The transmitter transmits RF signals using an outphasing scheme of converting one analog IF NC-EMS into two analog C-EMSs. In the transmitter, a baseband processor generates a baseband digital modulated I-signal and a baseband digital modulated Q-signal. An IF processor up-converts the baseband digital modulated I-signal and the baseband digital modulated Q-signal to generate one digital IF NC-EMS. A signal component separator separates the digital IF NC-EMS into a first digital IF C-EMS and a second digital IF C-EMS. An RF processor up-converts the first digital IF C-EMS and the second digital IF C-EMS to generate a first analog RF C-EMS and a second analog RF C-EMS. A power amplifier amplifies powers of the first and second analog RF C-EMSs. An RF combiner combines the first and second analog RF C-EMSs having the amplified powers to generate one combined analog RF C-EMS.

摘要翻译： 提供了一种无线通信系统的发射机和发射方法。 发射机使用将一个模拟IF NC-EMS转换成两个模拟C-EMS的外部方案来发射RF信号。 在发射机中，基带处理器产生基带数字调制I信号和基带数字调制Q信号。 IF处理器对基带数字调制I信号和基带数字调制Q信号进行升级转换，以生成一个数字IF NC-EMS。 信号分量分离器将数字IF NC-EMS分离成第一数字IF C-EMS和第二数字IF C-EMS。 RF处理器对第一个数字IF C-EMS和第二个数字IF C-EMS进行升级转换，以生成第一个模拟RF C-EMS和第二个模拟RF C-EMS。 功率放大器放大第一和第二模拟RF C-EMS的功率。 RF组合器组合具有放大功率的第一和第二模拟RF C-EMS以产生一个组合的模拟RF C-EMS。

公开(公告)号：US20080124883A1

公开(公告)日：2008-05-29

申请号：US11941452

申请日：2007-11-16

申请人： Douglas D. COOLBAUGH ,  Alvin J. Joseph ,  Seong-dong Kim ,  Louis D. Laozerotti ,  Xuefeng Liu ,  Robert M. Rassel

发明人： Douglas D. COOLBAUGH ,  Alvin J. Joseph ,  Seong-dong Kim ,  Louis D. Laozerotti ,  Xuefeng Liu ,  Robert M. Rassel

IPC分类号： H01L21/8222

CPC分类号： H01L27/0814 ,  H01L27/0664 ,  H01L27/0823 ,  H01L29/0821 ,  H01L29/7371 ,  H01L29/868

摘要： A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which includes providing a substrate including a first layer and forming a first doped region in the first layer. The method further includes forming a second layer on the first layer and forming a second doped region in the second layer. The second doped region is formed at a different depth than the first doped region. The method also includes forming a first reachthrough in the first layer and forming a second reachthrough in second layer to link the first reachthrough to the surface.

公开(公告)号：US07329940B2

公开(公告)日：2008-02-12

申请号：US11163882

申请日：2005-11-02

申请人： Douglas D. Coolbaugh ,  Alvin J. Joseph ,  Seong-dong Kim ,  Louis D. Lanzerotti ,  Xuefeng Liu ,  Robert M. Rassel

发明人： Douglas D. Coolbaugh ,  Alvin J. Joseph ,  Seong-dong Kim ,  Louis D. Lanzerotti ,  Xuefeng Liu ,  Robert M. Rassel

IPC分类号： H01L27/082

CPC分类号： H01L27/0814 ,  H01L27/0664 ,  H01L27/0823 ,  H01L29/0821 ,  H01L29/7371 ,  H01L29/868

摘要： A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which includes providing a substrate including a first layer and forming a first doped region in the first layer. The method further includes forming a second layer on the first layer and forming a second doped region in the second layer. The second doped region is formed at a different depth than the first doped region. The method also includes forming a first reachthrough in the first layer and forming a second reachthrough in second layer to link the first reachthrough to the surface.

摘要翻译： 一种结构包括具有形成在具有第一厚度的第一区域中的第一子集电极的单晶片和形成在具有不同于第一厚度的第二厚度的第二区域中的第二子集电极。 还可以设想一种方法，其包括提供包括第一层并在第一层中形成第一掺杂区的衬底。 该方法还包括在第一层上形成第二层并在第二层中形成第二掺杂区域。 第二掺杂区形成在与第一掺杂区不同的深度。 该方法还包括在第一层中形成第一通道并在第二层中形成第二通道以将第一通道连接到表面。

公开(公告)号：US20070157207A1

公开(公告)日：2007-07-05

申请号：US11474417

申请日：2006-06-26

申请人： Yong-Ho Kim ,  Byoung-Chul Song ,  Tae-Ho Hwang ,  Seong-Dong Kim ,  We-Duke Cho

发明人： Yong-Ho Kim ,  Byoung-Chul Song ,  Tae-Ho Hwang ,  Seong-Dong Kim ,  We-Duke Cho

IPC分类号： G06F9/46

CPC分类号： G06F9/485 ,  G06F9/4893 ,  Y02D10/24

摘要： The present invention relates to a hardwired scheduler for low power wireless device processor and a method for using the same wherein, for a processor used in a sensor node, ubiquitous small node and a wireless communication device which require a low power consumption, a storage of the currently running process and the process to be executed in priority in a list of subsequent processes to be carried out are automatically transmitted to the processor core, and the number of oscillations of the clock generator which operates the processor core is adjusted to be suitable for each process to reduce the power consumed by the processor to be applicable to devices operating on a network which require a low power consumption and small delay time.

摘要翻译： 本发明涉及一种用于低功率无线设备处理器的硬接线调度器及其使用方法，其中，对于在传感器节点中使用的处理器，普遍存在的小节点和需要低功耗的无线通信设备，存储 当前运行的处理和要执行的后续处理的列表中优先执行的处理被自动发送到处理器核心，并且调整操作处理器核心的时钟发生器的振荡次数以适合于 每个过程减少处理器消耗的功率，以适用于需要低功耗和小延迟时间的网络上运行的设备。

公开(公告)号：US06358786B1

公开(公告)日：2002-03-19

申请号：US09591965

申请日：2000-06-12

申请人： Seong Dong Kim

发明人： Seong Dong Kim

IPC分类号： H01L21337

CPC分类号： H01L29/739

摘要： A lateral bipolar field effect transistor having a drift region of a first conductivity formed on a silicon-on insulation substrate with a buried insulation layer, a gate region of a second conductivity formed over and from the buried insulation layer separated by a channel depth, in the drift region, a source region of the first conductivity contacting with the gate region and formed on the buried insulation layer, and a drain region of the first conductivity opposite to the source region, the drain region separated from the gate region by a selected distance. The gate region comprises a plurality of cells arranged parallel to an extension of the source region, each cell separated from adjacent cell by a channel width.

摘要翻译： 一种横向双极场效应晶体管，其具有形成在具有掩埋绝缘层的硅绝缘基底上的第一导电性的漂移区，形成在由沟道深度分开的掩埋绝缘层上方的第二导电的栅极区， 所述漂移区域，与所述栅极区域接触并形成在所述掩埋绝缘层上的所述第一导电性的源极区域和与所述源极区域相反的所述第一导电性的漏极区域，所述漏极区域与所述栅极区域分开一定距离 。 栅极区域包括与源极区域的延伸平行布置的多个单元，每个单元通过沟道宽度与相邻单元格分离。

公开(公告)号：US07977178B2

公开(公告)日：2011-07-12

申请号：US12395904

申请日：2009-03-02

申请人： Seong-Dong Kim ,  Zhijiong Lou ,  Huilong Zhu

发明人： Seong-Dong Kim ,  Zhijiong Lou ,  Huilong Zhu

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L29/165 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7848

摘要： A semiconductor device includes a buried insulator layer formed on a bulk substrate; a first type semiconductor material formed on the buried insulator layer, and corresponding to a body region of a field effect transistor (FET); a second type of semiconductor material formed over the buried insulator layer, adjacent opposing sides of the body region, and corresponding to source and drain regions of the FET; the second type of semiconductor material having a different bandgap than the first type of semiconductor material; wherein a source side p/n junction of the FET is located substantially within whichever of the first and the second type of semiconductor material having a lower bandgap, and a drain side p/n junction of the FET is located substantially entirely within whichever of the first and the second type of semiconductor material having a higher bandgap.

摘要翻译： 半导体器件包括形成在本体衬底上的掩埋绝缘体层; 形成在所述掩埋绝缘体层上并对应于场效应晶体管（FET）的体区的第一类型半导体材料; 形成在所述掩埋绝缘体层上，邻近所述本体区域的相对侧并且对应于所述FET的源极和漏极区域的第二类型的半导体材料; 所述第二类型的半导体材料具有与所述第一类型的半导体材料不同的带隙; 其中FET的源极p / n结基本上位于具有较低带隙的第一和第二类型的半导体材料中的任何一个中，并且FET的漏极侧p / n结基本上完全位于 第一和第二类型的具有较高带隙的半导体材料。